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T1010H
High temperature 10 A sensitive TRIACs
Features
■ ■ ■ ■ ■
A2
Medium current TRIAC Logic level sensitive TRIAC 150 °C max. Tj turn-off commutation Clip bounding RoHS (2002/95/EC) compliant packages
A2 G A1
Applications
■ ■
A2
The T1010H is designed for the control of AC actuators in appliances and industrial systems. The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through these sensitive gate TRIACs.
A2 A1 G A2 A1 G
D2PAK T1010H-6G
TO-220AB T1010H-6T
Description
Specifically designed to operate at 150 °C, the new 10 A T1010H TRIACs provide an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions. Based on ST logic level technology, they offer an IGT lower than 10 mA and specified minimal commutation and high noise immunity levels valid up to the Tj max.
Table 1.
Symbol IT(RMS)
Device summary
Value 10 600 10 Unit A V mA
VDRM/VRRM IGT MAX
May 2009
Doc ID 15715 Rev 1
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www.DataSheet4U.com Characteristics
T1010H
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Table 2.
Symbol IT(RMS) ITSM I²t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj
Characteristics
Absolute maximum ratings
Parameter On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range D2PAK, TO-220AB F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 150 °C Tc = 135 °C t = 16.7 ms t = 20 ms Value 10 105 A 100 66 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 150 A ²s A/µs V A W °C Unit A
Table 3.
Symbol IGT VGT VGD IH
(1)
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions VD = 12 V RL = 33 Ω VD = VDRM, RL = 3.3 kΩ IT = 100 mA I - III IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 150 °C Logic level, 0.1 V/µs, Tj = 150 °C Logic level, 15 V/µs, Tj = 150 °C Quadrant I - II - III I - II - III I - II - III 0.15 25 30 mA II 75 14.4 A/ms 3.8 35 V/µs Min. 1 Max. 10 1.0 Unit mA V V mA
IL dV/dt (1) (dI/dt)c (1)
1. For both polarities of A2 referenced to A1.
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Doc ID 15715 Rev 1
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Table 4.
Symbol VT (1) Vt0 Rd
(1) (1)
Characteristics
Static characteristics
Test conditions ITM = 14.1 A, tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C MAX. MAX. MAX. MAX. MAX. MAX. MAX. Value 1.5 0.80 41.0 5 3.6 3.0 2.5 mA Unit V V mΩ µA
IDRM IRRM
VD/VR = 400 V (at peak mains voltage) Tj = 150 °C VD/VR = 200 V (at peak mains voltage) Tj = 150 °C
1. for both polarities of A2 referenced to A1.
Table 5.
Symbol Rth(j-c) .