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T1010H Dataheets PDF



Part Number T1010H
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description High temperature 10 A sensitive TRIACs
Datasheet T1010H DatasheetT1010H Datasheet (PDF)

www.DataSheet4U.com T1010H High temperature 10 A sensitive TRIACs Features ■ ■ ■ ■ ■ A2 Medium current TRIAC Logic level sensitive TRIAC 150 °C max. Tj turn-off commutation Clip bounding RoHS (2002/95/EC) compliant packages A2 G A1 Applications ■ ■ A2 The T1010H is designed for the control of AC actuators in appliances and industrial systems. The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through these sensitive gate TRIACs. A2 A1 G.

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www.DataSheet4U.com T1010H High temperature 10 A sensitive TRIACs Features ■ ■ ■ ■ ■ A2 Medium current TRIAC Logic level sensitive TRIAC 150 °C max. Tj turn-off commutation Clip bounding RoHS (2002/95/EC) compliant packages A2 G A1 Applications ■ ■ A2 The T1010H is designed for the control of AC actuators in appliances and industrial systems. The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through these sensitive gate TRIACs. A2 A1 G A2 A1 G D2PAK T1010H-6G TO-220AB T1010H-6T Description Specifically designed to operate at 150 °C, the new 10 A T1010H TRIACs provide an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions. Based on ST logic level technology, they offer an IGT lower than 10 mA and specified minimal commutation and high noise immunity levels valid up to the Tj max. Table 1. Symbol IT(RMS) Device summary Value 10 600 10 Unit A V mA VDRM/VRRM IGT MAX May 2009 Doc ID 15715 Rev 1 1/10 www.st.com 10 www.DataSheet4U.com Characteristics T1010H 1 Table 2. Symbol IT(RMS) ITSM I²t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj Characteristics Absolute maximum ratings Parameter On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range D2PAK, TO-220AB F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 150 °C Tc = 135 °C t = 16.7 ms t = 20 ms Value 10 105 A 100 66 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 150 A ²s A/µs V A W °C Unit A Table 3. Symbol IGT VGT VGD IH (1) Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions VD = 12 V RL = 33 Ω VD = VDRM, RL = 3.3 kΩ IT = 100 mA I - III IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 150 °C Logic level, 0.1 V/µs, Tj = 150 °C Logic level, 15 V/µs, Tj = 150 °C Quadrant I - II - III I - II - III I - II - III 0.15 25 30 mA II 75 14.4 A/ms 3.8 35 V/µs Min. 1 Max. 10 1.0 Unit mA V V mA IL dV/dt (1) (dI/dt)c (1) 1. For both polarities of A2 referenced to A1. 2/10 Doc ID 15715 Rev 1 www.DataSheet4U.com T1010H Table 4. Symbol VT (1) Vt0 Rd (1) (1) Characteristics Static characteristics Test conditions ITM = 14.1 A, tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C MAX. MAX. MAX. MAX. MAX. MAX. MAX. Value 1.5 0.80 41.0 5 3.6 3.0 2.5 mA Unit V V mΩ µA IDRM IRRM VD/VR = 400 V (at peak mains voltage) Tj = 150 °C VD/VR = 200 V (at peak mains voltage) Tj = 150 °C 1. for both polarities of A2 referenced to A1. Table 5. Symbol Rth(j-c) Rth(j-a) Thermal resistance Parameter Junction to case (AC) S=1 Junction to ambient TO-220AB 60 cm2 D2PAK / TO-220AB D2PAK Value 1.50 45 °C/W Unit Figure 1. P(W) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 Maximum power dissipation versus Figure 2. on-state rms current (full cycle) IT(RMS)(A) 12 11 10 9 8 7 6 5 4 3 2 IT(RMS)(A) 2 3 4 5 6 7 8 9 10 On-state rms current versus case temperature (full cycle) 1 0 0 25 50 TC(°C) 75 100 125 150 Doc ID 15715 Rev 1 3/10 www.DataSheet4U.com Characteristics T1010H Figure 3. On-state rms current versus ambient temperature (free air convection, (full cycle) Figure 4. Relative variation of thermal impedance, versus pulse duration IT(RMS)(A) 3.0 2.5 2.0 1.5 1.0 0.5 Ta (°C) 0.0 0 25 50 75 100 125 150 K=[Zth/Rth] 1.E+00 Zth(j-c) 1.E-01 Zth(j-a) 1.E-02 tp(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 5. Relative variation of gate trigger Figure 6. current and voltage versus junction temperature (typical values) 2.0 IGT Q3 Relative variation of holding and latching current versus junction temperature (typical values) IGT, VGT[T j] / IGT, VGT[T j=25 °C] 2.5 IH, IL [T j] / IH, IL [T j=25 °C] 2.0 IGTQ1- Q2 1.5 1.5 IH IL 1.0 1.0 VGT Q1 - Q2- Q3 0.5 0.5 Tj(°C) 0.0 -50 -25 0 25 50 75 100 125 150 Tj(°C) 0.0 -50 -25 0 25 50 75 100 125 150 Figure 7. Surge peak on-state current versus Figure 8. number of cycles Non-repetitive surge peak on-state current and corresponding value of I2t Tj initial=25 °C dI/dt limitation: 50 A/µs ITSM ITSM(A) 110 100 90 80 70 60 50 40 30 20 10 0 1 10 100 1000 Repetitive TC=135 °C Non repetitive Tj initial=25 °C t=20ms ITSM (A), I²t (A²s) 1000 One cycle 100 I²t 10 Number of cycles Sinusoidal pulse width tp < 10 ms tP(ms) 1.00 10.00 1 0.01 0.10 4/10 Doc ID 15715 Rev 1 www.DataSheet4U.com T1010H Characteristics Figure 9. On-state characteristics (maximum Figure 10. Relative variation of critical rate of values) decrease of main current versus junction temperat.


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