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ST 13003
NPN Silicon Epitaxial Planar Transistor
for power switching and electron rectifier applic...
www.DataSheet4U.com
ST 13003
NPN Silicon Epitaxial Planar
Transistor
for power switching and electron rectifier applications. The
transistor is subdivided into one group according to its DC current gain.
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Ts Value 600 400 9 1.5 1.5 150 -55 to +150 Unit V V V A W
O
C C
O
Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 100 mA Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 1 mA Collector Cutoff Current at VCB = 600 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Saturation Voltage at IC = 1 A, IB = 250 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 250 mA Symbol hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) Min. 10 600 400 9 Max. 70 100 100 1 1.2 Unit V V V nA µA V V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006
www.DataSheet4U.com
ST 13003
TO-220 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006
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