www.DataSheet4U.com
STT13005
High voltage fast-switching NPN power transistor
General features
■ ■ ■ ■ ■
NPN bipolar t...
www.DataSheet4U.com
STT13005
High voltage fast-switching
NPN power
transistor
General features
■ ■ ■ ■ ■
NPN bipolar
transistor Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
2 1
Applications
■ ■
3
SOT-32
Electronic ballast for fluorescent lighting Flyback and forward single
transistor low power converters
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
Internal schematic diagram
Order codes
Part Number STT13005 Marking T13005 Package SOT-32 Packaging Tube
May 2007
Rev 1
1/10
www.st.com 10
www.DataSheet4U.com Electrical ratings
STT13005
1
Electrical ratings
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 700 400 9 2 4 1 2 45 -65 to 150 150 Unit V V V A A A A W °C °C
Table 2.
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Th...