STT13005D

www.DataSheet4U.com STT13005D High voltage fast-switching NPN power transistor Features ■ ■ ■ ■ Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications ■ ■ Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converters SOT-32 3 2 1 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Figure 1. Internal schematic diagram Table 1. Device summary Marking T13005D Package SOT-32 Packaging Tube Order codes STT13005D July 2008 Rev 1 1/10 www.st.com 10 www.DataSheet4U.com Electrical ratings STT13005D 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 700 400 9 2 4 1 2 45 -65 to 150 150 Unit V V V A A A A W °C °C 2/10 www.DataSheet4U.com STT13005D Electrical ...