SMPS MOSFET
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PD - 95095A
SMPS MOSFET
IRLR8203PbF IRLU8203PbF
HEXFET® Power MOSFET
Applications l High Frequen...
Description
www.DataSheet4U.com
PD - 95095A
SMPS MOSFET
IRLR8203PbF IRLU8203PbF
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current
l
VDSS
30V
RDS(on) max
6.8mΩ
ID
110A
D-Pak IRLR8203PbF
I-Pak IRLU8203PbF
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 ± 20 110 76 120 140 69 0.92 -55 to + 175
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.09 50 110
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
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1
12/06/04
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IRLR/U8203PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on)...
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