25V Single N-Channel HEXFET Power MOSFET
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PD - 96158
IRF8252PbF
Applications
Synchronous MOSFET for Notebook Processor Power l Synchronous R...
Description
www.DataSheet4U.com
PD - 96158
IRF8252PbF
Applications
Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters
l
HEXFET® Power MOSFET
VDSS
25V 2.7m:@VGS = 10V 35nC
A A D D D D
RDS(on) max
Qg
Benefits
l l l l l l l l
Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg RoHS Compliant (Halogen Free) Low Thermal Resistance
S S S G
1 2 3 4
8 7
6 5
Top View
SO-8
Description
The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
25 ±20 25 20 200 2.5 1.6 0.02 -55 to + 150
Units
V
c
A
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W W/°C °C
Thermal Resistance
RθJL RθJA
g Jun...
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