30V Single N-Channel HEXFET Power MOSFET
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PD - 97390
IRLB8721PbF
Applications
l l l
HEXFET® Power MOSFET
Optimized for UPS/Inverter Applic...
Description
www.DataSheet4U.com
PD - 97390
IRLB8721PbF
Applications
l l l
HEXFET® Power MOSFET
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
VDSS RDS(on) max Qg (typ.) 30V 8.7m @VGS = 10V 7.6nC
:
D
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
G
D
S
TO-220AB IRLB8721PbF G D S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 62 44 250 65 33 0.43 -55 to + 175 300 (1.6mm from case) 10lb in (1.1N m)
Units
V
c
A
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
W W/°C
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
°C
x
x
Thermal Resistance
RθJC RθCS RθJA Junction-to-Case
g f
Parameter
Typ.
––– 0.5 –––
Max.
2.3 ––– 62
Units
°C/W
Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Notes through
are on page 9
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1
4/22/09
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IRLB8721PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ ID...
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