MOSFET. KI4300DY Datasheet

KI4300DY MOSFET. Datasheet pdf. Equivalent

Part KI4300DY
Description MOSFET
Feature www.DataSheet4U.com SMD Type N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky D.
Manufacture KEXIN
Datasheet
Download KI4300DY Datasheet



KI4300DY
www.DataSheet4U.com
SMD Type
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
KI4300DY
ICIC
Features
TrenchFET Power MOSFET
LITTLE FOOT PlusTM Integrated Schottky
PWM Optimized
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage
Continuous Drain Current (TJ = 150 ) TA = 25
(MOSFET)*
TA = 70
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)*
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)* TA = 25
TA = 70
Maximum Power Dissipation (Schottky)* TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
Symbol
VDS
VDA
VGS
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
10 secs
Steady State
30
30
20
9 6.4
7 5.1
40
2.3 1.25
2.3 1.25
20
2.5 1.38
1.6 0.88
2.2 1.25
1.4 0.8
-55 to 150
Unit
V
A
W
www.kexin.com.cn 1



KI4300DY
www.DataSheet4U.com
SMD Type
ICIC
KI4300DY
Thermal Resistance Ratings
Parameter
Symbol
Maximum Junction-to-Ambient *
Maximum Junction-to-Foot (Drain)
t 10 sec
Steady-State
Steady-State
* Surface Mounted on 1" X 1" FR4 Board.
RthJA
RthJF
MOSFET
Typ Max
40 50
70 90
18 23
Schottky
Typ Max
45 55
78 100
25 30
Unit
/W
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain Source On State Resistance*
rDS(on)
Forward Transconductanceb
Schottky Diode Forward Voltage*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
gfs
VSD
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
* Pulse test :Pulse width 300 s,duty cycle 2%
Testconditons
VDS = VGS, ID = 250 A
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 7 A
VDS = 15 V, ID = 9 A
IS = 1.0 A, VGS = 0 V
VDS = 15 V, VGS = 5 V, ID = 9 A
VDD=15V,RL=15
,ID=1A,VGEN=10V,RG=6
IF = 2.3 A, di/dt = 100 A/ s
IF = 1.0 A
IF = 1.0 A, TJ = 125
Vr = 24 V
Vr = 24 V, TJ = 100
Vr = -24 V, TJ = 125
Vr = 10 V
Min Typ Max Unit
0.8 V
100 nA
100
2000
A
30 A
0.0155 0.0185
0.0275 0.033
16 S
0.47 0.5 V
8.7 13
2.25 nC
4.2
0.5 2.7
11 16
8 15
ns
22 30
9 15
32 60 ns
0.47 0.5 V
0.36 0.42 V
0.004 0.100
0.7 10 mA
3.0 20
50 pF
2 www.kexin.com.cn





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)