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SMD Type
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY
IC IC...
www.DataSheet4U.com
SMD Type
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with
Schottky Diode KI4300DY
IC IC
Features
TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated
Schottky PWM Optimized
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (
Schottky) Gate-Source Voltage Continuous Drain Current (TJ = 150 (MOSFET)* Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)* Average Foward Current (
Schottky) Pulsed Foward Current (
Schottky) Maximum Power Dissipation (MOSFET)* TA = 25 TA = 70 Maximum Power Dissipation (
Schottky)* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg PD ) TA = 25 TA = 70 IDM IS IF IFM 2.5 1.6 2.2 1.4 -55 to 150 2.3 2.3 20 1.38 0.88 1.25 0.8 W Symbol VDS VDA VGS ID 9 7 40 1.25 1.25 10 secs 30 30 20 6.4 5.1 A V Steady State Unit
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SMD Type
KI4300DY
Thermal Resistance Ratings
MOSFET Parameter t 10 sec Symbol Typ Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) RthJA RthJF 40 70 18 Max 50 90 23 Typ 45 78 25 Max 55 100 30 /W
Schottky Unit
IC IC
Steady-State Steady-State
* Surface Mounted on 1" X 1" FR4 Board.
Electrical Characteristics Ta = 25
Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain Source On State Resistance* Forward Transconductanceb
Schottky Diode Forward Voltage* Total Gate Charge ...