MOSFET. KI4464DY Datasheet

KI4464DY MOSFET. Datasheet pdf. Equivalent

Part KI4464DY
Description MOSFET
Feature www.DataSheet4U.com SMD Type N-Channel 200-V (D-S) MOSFET KI4464DY IC IC Features PWM Optimized f.
Manufacture KEXIN
Total Page 2 Pages
Datasheet
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KI4464DY
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SMD Type
N-Channel 200-V (D-S) MOSFET
KI4464DY
Features
PWM Optimized for (Lowest Qg and Low RG)
TrenchFET Power MOSFET
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 ) TA = 25
TA = 70
Pulsed Drain Current
Single Avalanch Current
L = 0.1 mH
Single Avalanch Energy
L = 0.1 mH
Continuous Source Current ( Diode Conduction)*
Maximum Power Dissipation *
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
10 secs
Steady State
200
20
2.2 1.7
1.7 1.3
8
3
0.45
2.1 1.2
2.5 1.5
1.6 0.9
-55 to 150
Unit
V
A
mJ
A
W
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KI4464DY
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SMD Type
ICIC
KI4464DY
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *
Maximum Junction-to-Foot (Drain)
t 10 sec
Steady-State
Steady-State
* Surface Mounted on 1" X 1" FR4 Board.
Symbol
RthJA
RthJF
Typical
37
68
17
Maximum
50
85
21
Unit
/W
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain Source On State Resistance*
rDS(on)
Forward Transconductanceb
Schottky Diode Forward Voltage*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
gfs
VSD
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
* Pulse test :Pulse width 300 s,duty cycle 2%
Testconditons
VDS = VGS, ID = 250 A
VDS = 0 V, VGS = 20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 55
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 2.2 A
VGS = 6.0 V, ID = 2.1 A
VDS = 15 V, ID = 2.2 A
IS = 2.1 A, VGS = 0 V
VDS = 100 V, VGS = 10 V, ID = 2.2 A
VDD=100V,RL=100
,ID=1A,VGEN=10V,RG=6
IF = 2.1 A, di/dt = 100 A/ s
Min Typ Max Unit
2.0 4 V
100 nA
1
A
5
8A
0.195 0.240
0.210 0.260
8.0 S
0.8 1.2 V
12 18
2.5 nC
3.8
2.5
10 15
12 20
ns
15 25
15 25
60 90 ns
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