MOSFET. KI4500BDY Datasheet

KI4500BDY MOSFET. Datasheet pdf. Equivalent

Part KI4500BDY
Description MOSFET
Feature www.DataSheet4U.com SMD Type Transistors IC Complementary MOSFET Half-Bridge (N- and P-Channel) K.
Manufacture KEXIN
Datasheet
Download KI4500BDY Datasheet



KI4500BDY
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SMD Type
TransistIoCrs
Complementary MOSFET Half-Bridge (N- and P-Channel)
KI4500BDY
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings TA = 25
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TA = 25
(TJ = 150 )*
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
*Surface Mounted on FR4 Board;t 10 sec
N-Channel
P-Channel
10 sec Steady State 10 sec Steady State
20 -20
12 12
9.1 6.6 ?5.3 -3.8
7.3 5.3 -4.9 -3.1
30 -20
2.1 1.1 -2.1 -1.1
2.5 1.3 2.5 1.3
1.6 0.8 1.6 0.8
-55 to 150
Unit
V
V
A
A
A
A
W
W
Thermal Resistance Ratings TA = 25
Parameter
Symbol
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot
*Surface Mounted on FR4 Board.
t 10 sec
Steady State
Steady State
RthJA
RthJc
N-Channel
Typ Max
40 50
75 95
20 22
P-Channel
Typ Max
41 50
75 95
23 26
Unit
/W
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KI4500BDY
www.DataSheet4U.com
SMD Type
TransistIoCrs
KI4500BDY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Symbol
Testconditons
VDS = VGS, ID = 250 A
VGS( th)
VDS = VGS, ID = -250 A
Gate Body Leakage
IGSS VDS = 0 V VGS = 12 V
Zero Gate Voltage Drain Current
On State Drain Currenta
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
VDS = 20V, VGS = 0 V
VDS = -16V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55
VDS = -16V, VGS = 0 V, TJ = 55
VDS =5 V, VGS = 4.5 V
VDS =-5 V, VGS = -4.5 V
VGS = 4.5 V, ID = 9.1A
VGS = -4.5 V, ID = -5.3A
VGS = 2.5 V, ID = 3.3A
VGS = -2.5 V, ID = -1A
VDS = 15 V, ID = 9.1A
VDS = -15 V, ID = -5.3A
IS = 2.1A, VGS = 0 V
IS = -2.1A, VGS = 0 V
N-Channel
VDS = 10 V, VGS = 4.5V, ID = 9.1A
Gate Source Charge
Gate Drain Charge
Qgs
P-Channel
VDS = -10 V, VGS = -4.5 V, ID = -5.3A
Qgd
Turn On Time
Rise Time
td(on)
tr
N Channel
VDD = 10 V, RL = 10
ID= 1A, VGEN = 10V, Rg = 6
Turn Off Delay Time
Fall Time
td( off)
tf
P-Channel
VDD = -10 V, RL = 10
ID= -1 A, VGEN = -4.5 V, Rg = 6
Source-Drain Reverse Recovery
Time
IF = 2.1A, di/dt = 100 A/ s
trr
IF =- 2.1 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
0.6 1.5
V
-0.6 -1.5
100
100
nA
1
-1
5
A
-5
30
A
-20
0.016 0.020
0.048 0.060
0.024 0.030
0.082 0.100
29
mS
11
0.8 1.2
?0.8 -1.2
V
11 17
6.0 9
2.5
nC
1.3
3.2
1.6
35 50
20 30
50 80
35 60
31 50
ns
55 85
15 30
35 60
30 60
25 50
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