KI4500BDY

www.DataSheet4U.com SMD Type Transistors IC Complementary MOSFET Half-Bridge (N- and P-Channel) KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25 (TJ = 150 )* Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec TJ, Tstg TA = 70 IDM IS PD 2.1 2.5 1.6 Symbol VDS VGS ID 9.1 7.3 30 1.1 1.3 0.8 -2.1 2.5 1.6 -55 to 150 N-Channel 10 sec Steady State 20 12 6.6 5.3 ?5.3 -4.9 -20 -1.1 1.3 0.8 P-Channel 10 sec Steady State -20 12 -3.8 -3.1 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 40 75 20 Max 50 95 22 P-Channel Typ 41 75 23 Max 50 95 26 /W Unit Steady State Steady State www.kexin.com.cn 1 www.DataSheet4U.com SMD Type KI4500BDY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -16V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 4.5 V VDS =-5 V, VGS = -4.5 V VGS = 4.5 V, ID = 9.1A Drain Source On State Resistanc...