MOSFET. KI4501ADY Datasheet

KI4501ADY MOSFET. Datasheet pdf. Equivalent

Part KI4501ADY
Description MOSFET
Feature www.DataSheet4U.com SMD Type Transistors IC Complementary (N- and P-Channel) MOSFET Half-Bridge K.
Manufacture KEXIN
Datasheet
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KI4501ADY
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SMD Type
TransistIoCrs
Complementary (N- and P-Channel) MOSFET Half-Bridge
KI4501ADY
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings TA = 25
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on FR4 Board;t 10 sec.
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
N-Channel
P-Channel
10 sec Steady State 10 sec Steady State
30 -8
20 8
8.8 6.3 -5.7 -4.1
7 5.2 -4.5 -3.3
30 -30
1.8 1 -1.8 1
2.5 1.3 2.5 1.3
1.6 0.84 1.6 0.84
-55 to 150
Unit
V
V
A
A
A
A
W
W
Thermal Resistance Ratings TA = 25
Parameter
Symbol
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot
*Surface Mounted on FR4 Board.
t 10 sec
Steady State
Steady State
RthJA
RthJc
N-Channel
Typ Max
40 50
75 95
18 23
P-Channel
Typ Max
42 50
76 95
21 26
Unit
/W
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KI4501ADY
www.DataSheet4U.com
SMD Type
TransistIoCrs
KI4501ADY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
Symbol
VGS( th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Testconditons
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 0 V VGS = 20 V
VDS = 0 V VGS = 8 V
VDS = 30V, VGS = 0 V
VDS = -8V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55
VDS = -8V, VGS = 0 V, TJ = 55
VDS =5 V, VGS = 10 V
VDS =-5 V, VGS = -4.5 V
VGS = 10 V, ID = 8.8A
VGS = -4.5 V, ID = -5.7A
VGS = 4.5 V, ID = 7.0A
VGS = -2.5 V, ID = -4.8A
VDS = 15 V, ID = 8.8A
VDS = -15 V, ID = -5.7A
IS = 1.8A, VGS = 0 V
IS = -1.8A, VGS = 0 V
N-Channel
VDS = 15 V, VGS = 5V, ID = 8.8A
Gate Source Charge
Gate Drain Charge
Qgs
P-Channel
VDS = -4 V, VGS = -5 V, ID = -5.7A
Qgd
Turn On Time
Rise Time
td(on)
tr
N Channel
VDD = 15 V, RL = 15
ID= 1A, VGEN = 10V, Rg = 6
Turn Off Delay Time
Fall Time
td( off)
tf
P-Channel
VDD = -4 V, RL = 4
ID= -1 A, VGEN = -4.5 V, Rg = 6
Source-Drain Reverse Recovery Time trr IF = 1.8 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
0.8
-0.45
1.8
V
1.0
100
100
nA
1
-1
5
A
-5
30
A
-20
0.015 0.018
0.030 0.042
0.022 0.027
0.048 0.060
18
S
12
0.73
-0.75
11.5
1.1
- 1.1
20
V
13.5
3
2.2
4
20
nC
3
15 22
21 40
8 15
45 70
35 50 ns
60 100
10 20
55 85
30 60
50 100
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