KI4511DY

www.DataSheet4U.com SMD Type N- and P-Channel 20-V (D-S) MOSFET KI4511DY Transistors IC Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec. TJ, Tstg IDM IS PD 1.7 2 1.3 Symbol VDS VGS ID 9.6 7.7 40 0.9 1.1 0.7 -1.7 2 1.3 -55 to 150 N-Channel 10 sec Steady State 20 16 7.2 5.8 -6.2 -4.9 -40 0.9 1.1 0.7 P-Channel 10 sec Steady State -20 12 -4.6 -3.7 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 50 85 30 Max 62.5 110 40 P-Channel Typ 50 90 30 Max 62.5 110 35 /W Unit Steady State Steady State www.kexin.com.cn 1 www.DataSheet4U.com SMD Type KI4511DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 16 V VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -16V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 10 V VDS =-5 V, VGS = -4.5 V VGS = 10 V, ID = 9.6A Drain Source On State Resistan...