MOSFET. KI4511DY Datasheet

KI4511DY MOSFET. Datasheet pdf. Equivalent

Part KI4511DY
Description MOSFET
Feature www.DataSheet4U.com SMD Type N- and P-Channel 20-V (D-S) MOSFET KI4511DY Transistors IC Features .
Manufacture KEXIN
Datasheet
Download KI4511DY Datasheet



KI4511DY
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SMD Type
TransistIoCrs
N- and P-Channel 20-V (D-S) MOSFET
KI4511DY
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings TA = 25
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on FR4 Board;t 10 sec.
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
N-Channel
P-Channel
10 sec Steady State 10 sec Steady State
20 -20
16 12
9.6 7.2 -6.2 -4.6
7.7 5.8 -4.9 -3.7
40 -40
1.7 0.9 -1.7 0.9
2 1.1 2 1.1
1.3 0.7 1.3 0.7
-55 to 150
Unit
V
V
A
A
A
A
W
W
Thermal Resistance Ratings TA = 25
Parameter
Symbol
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot
*Surface Mounted on FR4 Board.
t 10 sec
Steady State
Steady State
RthJA
RthJc
N-Channel
Typ Max
50 62.5
85 110
30 40
P-Channel
Typ Max
50 62.5
90 110
30 35
Unit
/W
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KI4511DY
www.DataSheet4U.com
SMD Type
TransistIoCrs
KI4511DY
Electrical Characteristics TJ = 25
Parameter
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
Symbol
VGS( th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Testconditons
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 0 V VGS = 16 V
VDS = 0 V VGS = 12 V
VDS = 20V, VGS = 0 V
VDS = -16V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55
VDS = -16V, VGS = 0 V, TJ = 55
VDS =5 V, VGS = 10 V
VDS =-5 V, VGS = -4.5 V
VGS = 10 V, ID = 9.6A
VGS = -4.5 V, ID = -6.2A
VGS = 4.5 V, ID = 8.6A
VGS = -2.5 V, ID = -5A
VDS = 15 V, ID = 9.6A
VDS = -15 V, ID = -6.2A
IS = 1.7A, VGS = 0 V
IS = -1.7A, VGS = 0 V
N-Channel
VDS = 10 V, VGS = 4.5V, ID = 9.6A
Gate Source Charge
Gate Drain Charge
Qgs
P-Channel
VDS = -10 V, VGS = -4.5 V, ID = -6.2A
Qgd
Turn On Time
Rise Time
td(on)
tr
N Channel
VDD = 10 V, RL = 10
ID= 1A, VGEN = 10V, Rg = 6
Turn Off Delay Time
Fall Time
td( off)
tf
P-Channel
VDD = -10 V, RL = 10
ID= -1 A, VGEN = -4.5 V, Rg = 6
IF = 1.7 A, di/dt = 100 A/ s
Source-Drain Reverse Recovery Time trr
IF = -1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
0.6 1.8
-0.6 1.4
100
100
1
-1
5
-5
40
-40
0.0115 0.0145
0.022 0.033
0.0135 0.017
0.035 0.050
33
17
0.8 1.2
?0.8 -1.2
11.5 18
17 20
3.7
4.1
3.3
4.3
12 20
25 40
12 20
V
nA
A
A
S
V
nC
30 45
55 85 ns
70 105
15 25
50 75
50 100
40 80
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