MOSFET. KI4532ADY Datasheet

KI4532ADY MOSFET. Datasheet pdf. Equivalent

Part KI4532ADY
Description MOSFET
Feature www.DataSheet4U.com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532ADY Transistors IC PIN Conf.
Manufacture KEXIN
Total Page 2 Pages
Datasheet
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KI4532ADY
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SMD Type
TransistIoCrs
N- and P-Channel 30-V (D-S) MOSFET
KI4532ADY
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
N-Channel
P-Channel
10 sec Steady State 10 sec Steady State
30 -30
20 20
4.9 3.7 -3.9 -3
3.9 2.9 -3.1 -2.4
20
1.7 0.94 -1.7
-1
2 1.13 2
1.2
1.3 0.73 1.3 0.76
-55 to 150
Unit
V
V
A
A
A
A
W
W
Thermal Resistance Ratings TA = 25
Parameter
Symbol
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot
t 10 sec
Steady State
Steady State
*Surface Mounted on 1" X 1" FR4 Board.
RthJA
RthJc
N-Channel
Typ Max
55 62.5
90 110
40 50
P-Channel
Typ Max
54 62.5
87 105
34 45
Unit
/W
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KI4532ADY
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SMD Type
TransistIoCrs
KI4532ADY
Electrical Characteristics TJ = 25
Parameter
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
Symbol
VGS( th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Testconditons
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 0 V VGS = 20 V
VDS = 0 V VGS = 20 V
VDS = 30V, VGS = 0 V
VDS = -30V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55
VDS = -30V, VGS = 0 V, TJ = 55
VDS 5 V, VGS = 10 V
VDS -5 V, VGS = -10 V
VGS = 10 V, ID = 4.9A
VGS = -10 V, ID = -3.9A
VGS = 4.5 V, ID = 4.1A
VGS = -4.5 V, ID = -3.0A
VDS = 15 V, ID = 4.9A
VDS = -15 V, ID = -2.5A
IS = 1.7A, VGS = 0 V
IS = -1.7A, VGS = 0 V
N-Channel
VDS = 10 V, VGS = 10V, ID = 4.9A
Gate Source Charge
Gate Drain Charge
Qgs
P-Channel
VDS = -10 V, VGS = -10 V, ID = -3.9A
Qgd
Turn On Time
Rise Time
td(on)
tr
N Channel
VDD = 10 V, RL = 10
ID= 1A, VGEN = 10V, Rg = 6
Turn Off Delay Time
Fall Time
td( off)
tf
P-Channel
VDD = -10 V, RL = 10
ID= -1 A, VGEN = -10 V, Rg = 6
IF = 1.7 A, di/dt = 100 A/ s
Source-Drain Reverse Recovery Time trr
IF = -1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
1
V
-1
100
100
1
-1
5
-5
20
-20
0.044 0.053
nA
A
A
0.062 0.080
0.062 0.075
0.105 0.135
11
5
0.80 1.2
-0.82 -1.2
8 16
10 20
S
V
1.4
nC
2
1.2
1.9
12 20
8 15
10 20
9 18
23 45 ns
21 40
8 15
10 20
25 40
27 40
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