MOSFET. KI4532DY Datasheet

KI4532DY MOSFET. Datasheet pdf. Equivalent

Part KI4532DY
Description MOSFET
Feature www.DataSheet4U.com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532DY Transistors IC PIN Confi.
Manufacture KEXIN
Datasheet
Download KI4532DY Datasheet



KI4532DY
www.DataSheet4U.com
SMD Type
TransistIoCrs
N- and P-Channel 30-V (D-S) MOSFET
KI4532DY
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
*Surface Mounted on FR4 Board, t 10 sec.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
RthJA
N-Channel P-Channel
30 -30
20 20
3.9 3.5
3.1 2.8
20 20
1.7 -1.7
22
1.3 1.3
-55 to 150
62.5
Unit
V
V
A
A
A
A
W
W
/W
www.kexin.com.cn 1



KI4532DY
www.DataSheet4U.com
SMD Type
TransistIoCrs
KI4532DY
Electrical Characteristics TJ = 25
Parameter
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
Symbol
VGS( th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Testconditons
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 0 V VGS = 20 V
VDS = 0 V VGS = 20 V
VDS = 30V, VGS = 0 V
VDS = -30V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55
VDS = -30V, VGS = 0 V, TJ = 55
VDS 5 V, VGS = 10 V
VDS -5 V, VGS = -10 V
VGS = 10 V, ID = 3.9A
VGS = -10 V, ID = -2.5A
VGS = 4.5 V, ID = 3.1A
VGS = -4.5 V, ID = -1.8A
VDS = 15 V, ID = 3.9A
VDS = -15 V, ID = -2.5A
IS = 1.7A, VGS = 0 V
IS = -1.7A, VGS = 0 V
N-Channel
VDS = 10 V, VGS = 10V, ID = 3.9A
Gate Source Charge
Gate Drain Charge
Qgs
P-Channel
VDS = -10 V, VGS = -10 V, ID = -2.5A
Qgd
Turn On Time
Rise Time
td(on)
tr
N Channel
VDD = 10 V, RL = 10
ID= 1A, VGEN = 10V, Rg = 6
Turn Off Delay Time
Fall Time
td( off)
tf
P-Channel
VDD = -10 V, RL = 10
ID= -1 A, VGEN = -10 V, Rg = 6
IF = 1.7 A, di/dt = 100 A/ s
Source-Drain Reverse Recovery Time trr
IF = -1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
1
V
-1
100
100
nA
1
-1
25
-25
15
-15
0.043 0.065
A
A
0.066 0.085
0.075 0.095
0.125 0.19
7
S
5
0.8 1.2
-0.8 -1.2
V
9.8 15
8.7 15
2.1
nC
1.9
1.6
1.3
9 15
7 15
6 18
9 18
18 27 ns
14 27
6 15
8 15
52 80
50 80
2 www.kexin.com.cn





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)