MOSFET. KI4539ADY Datasheet

KI4539ADY MOSFET. Datasheet pdf. Equivalent

Part KI4539ADY
Description MOSFET
Feature www.DataSheet4U.com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4539ADY Transistors IC PIN Conf.
Manufacture KEXIN
Datasheet
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KI4539ADY
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SMD Type
TransistIoCrs
N- and P-Channel 30-V (D-S) MOSFET
KI4539ADY
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
N-Channel
P-Channel
10 secs Steady State 10 secs Steady State
30 -30
20
5.9 4.4
20
-4.9 -3.7
4.7 3.6 -3.9 -2.9
30
1.7 0.9 -1.7 -0.9
2 1.1 2 1.1
1.3 0.7 1.3 0.7
-55 to 150
Unit
V
V
A
A
A
A
W
W
Absolute Maximum Ratings TA = 25
Parameter
Symbol
Maximum Junction-to-Ambient *
Maximum Junction-to-Foot(Drain)
t 10 sec
Steady State
Steady State
*Surface Mounted on 1" X 1" FR4 Board.
RthJA
RthJF
N-Channel
Typ Max
50 62.5
90 110
40 40
P-Channel
Typ Max
52 62.5
90 110
32 40
Unit
/W
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KI4539ADY
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SMD Type
TransistIoCrs
KI4539ADY
Electrical Characteristics TJ = 25
Parameter
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
Symbol
VGS( th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Testconditons
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 0 V VGS = 20 V
VDS = 0 V VGS = 20 V
VDS = 24V, VGS = 0 V
VDS = -24V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55
VDS = -24V, VGS = 0 V, TJ = 55
VDS 5 V, VGS = 10 V
VDS -5 V, VGS = -10 V
VGS = 10 V, ID = 5.9A
VGS = -10 V, ID = -4.9A
VGS = 4.5 V, ID = 4.9A
VGS = -4.5 V, ID = -3.7A
VDS = 15 V, ID = 5.9A
VDS = -15 V, ID = -4.9A
IS = 1.7A, VGS = 0 V
IS = -1.7A, VGS = 0 V
N-Channel
VDS = 15 V, VGS = 10V, ID = 5.9A
Gate Source Charge
Gate Drain Charge
Qgs
P-Channel
VDS = -15 V, VGS = -10 V, ID = -4.9A
Qgd
Gate Resistance
Rg
Turn On Time
Rise Time
td(on)
tr
N Channel
VDD = 15 V, RL = 15
ID= 1A, VGEN = 10V, Rg = 6
Turn Off Delay Time
Fall Time
td( off)
tf
P-Channel
VDD = -15 V, RL = 15
ID= -1 A, VGEN = -10 V, Rg = 6
IF = 1.7 A, di/dt = 100 A/ s
Source-Drain Reverse Recovery Time trr
IF = -1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
1
V
-1
100
100
nA
1
-1
5
A
-5
30
A
-30
0.032 0.036
0.043 0.053
0.042 0.053
0.075 0.090
15
S
9
0.80 1.2
-0.80 -1.2
V
13 20
15 25
2.3
nC
4
2
2.0
0.5 2.2
5 12.6
6 12
7 15
14 25
10 20
30 60 ns
40 80
5 10
20 40
30 60
30 60
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