ST8050

www.DataSheet4U.com ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 019g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 25 6 1.5 1 150 - 55 to + 150 Unit V V V A W O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 5 mA at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 800 mA Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VBE = 6 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Voltage at IC = 10 mA, VCE = 1 V Gain Bandwidth Product at VCE = 10 V, IC = 50 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol hFE hFE hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) VBE fT COB Min. 45 120 160 40 40 25 6 120 - Typ. 15 Max. 200 300 100 100 0.5 1.2 1 - Unit nA nA V V V V V V MHz pF 8050C 8050D SEMTECH ELECT...