Power MOSFET. IRFH3702PBF Datasheet

IRFH3702PBF MOSFET. Datasheet pdf. Equivalent

Part IRFH3702PBF
Description Power MOSFET
Feature PD - 97368 www.DataSheet4U.com IRFH3702PbF Applications l l l HEXFET® Power MOSFET Synchronous Bu.
Manufacture International Rectifier
Datasheet
Download IRFH3702PBF Datasheet



IRFH3702PBF
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Applications
l Synchronous Buck Converter for Computer
Processor Power
l Isolated DC to DC Converters for Network and
Telecom
l Buck Converters for Set-Top Boxes
PD - 97368
IRFH3702PbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
7.1m@VGS = 10V 9.6nC
Benefits
l Low RDS(ON)
l Very Low Gate Charge
l Low Junction to PCB Thermal Resistance
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
S
DS
DS
G
D
D
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
30
± 20
16
12
42
120
2.8
1.8
0.02
-55 to + 150
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
ghRθJA Junction-to-Ambient
hRθJA Junction-to-Ambient (t<10s)
Typ.
–––
–––
–––
Max.
6.0
45
44
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through † are on page 10
www.irf.com
Units
V
A
W
W/°C
°C
Units
°C/W
1
02/12/09



IRFH3702PBF
IRFH3702PbF
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Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
37
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
5.7
8.7
1.8
-6.5
–––
–––
–––
–––
–––
9.6
2.4
1.2
3.1
2.9
4.3
7.4
2.2
9.6
15
11
5.8
1510
306
120
Max. Units
Conditions
–––
–––
7.1
11.8
2.35
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 12A
V
mV/°C
VDS
=
VGS,
ID
=
25µA
1.0
150
100
-100
–––
14
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 12A
––– VDS = 15V
–––
–––
nC
VGS = 4.5V
ID = 12A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 12A
RG=1.8
––– See Fig.15
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
77
12
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 3.5
––– ––– 120
––– ––– 1.0
––– 17 26
––– 15 23
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
ns TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 225A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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