Power MOSFET. IRFH7934PBF Datasheet

IRFH7934PBF MOSFET. Datasheet pdf. Equivalent

Part IRFH7934PBF
Description Power MOSFET
Feature Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MO.
Manufacture International Rectifier
Total Page 10 Pages
Datasheet
Download IRFH7934PBF Datasheet



IRFH7934PBF
Applications
l Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
IRFH7934PbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.5m @VGS = 10V 20nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Base part number
IRFH7934PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRFH7934TRPBF
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
24
19
76
190
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes  through … are on page 10
1 www.irf.com © 2013 International Rectifier
Typ.
–––
–––
Max.
2.9
40
Units
°C/W
August 20, 2013



IRFH7934PBF
IRFH7934PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
2.9
4.2
1.8
-6.5
–––
–––
–––
–––
–––
20
4.8
2.5
6.3
6.4
8.8
15
1.7
12
16
14
7.5
3100
623
241
–––
–––
3.5
5.1
2.35
–––
1.0
150
100
-100
–––
30
–––
–––
–––
–––
–––
–––
3.1
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 24A
VGS = 4.5V, ID = 19A
V
mV/°C
VDS
=
VGS,
ID
=
50μA
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 19A
VDS = 15V
nC VGS = 4.5V
ID = 19A
See Fig.17 & 18
nC VDS = 16V, VGS = 0V
Ω
VDD = 15V, VGS = 4.5V
ns ID = 19A
RG=1.8Ω
See Fig.15
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
97
19
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 3.9
––– ––– 190
––– ––– 1.0
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 19A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– 20 30 ns TJ = 25°C, IF = 19A, VDD = 15V
––– 28 42 nC di/dt = 325A/μs See Fig.16
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2013 International Rectifier
August 20, 2013





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