DatasheetsPDF.com

IRFH7934PBF Dataheets PDF



Part Number IRFH7934PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFH7934PBF DatasheetIRFH7934PBF Datasheet (PDF)

Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems IRFH7934PbF VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg :3.5m @VGS = 10V 20nC Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l RoHS compliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for mo.

  IRFH7934PBF   IRFH7934PBF


Document
Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems IRFH7934PbF VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg :3.5m @VGS = 10V 20nC Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l RoHS compliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for more reliable Soldering PQFN 5X6 mm Base part number IRFH7934PBF Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRFH7934TRPBF Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Max. 30 ± 20 24 19 76 190 3.1 2.0 0.025 -55 to + 150 Units V A W W/°C °C Thermal Resistance Parameter fRθJC gRθJA Junction-to-Case Junction-to-Ambient Notes  through … are on page 10 1 www.irf.com © 2013 International Rectifier Typ. ––– ––– Max. 2.9 40 Units °C/W August 20, 2013 IRFH7934PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance td(on) tr td(off) tf Ciss Coss Crss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Avalanche Characteristics 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 110 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.021 2.9 4.2 1.8 -6.5 ––– ––– ––– ––– ––– 20 4.8 2.5 6.3 6.4 8.8 15 1.7 12 16 14 7.5 3100 623 241 ––– ––– 3.5 5.1 2.35 ––– 1.0 150 100 -100 ––– 30 ––– ––– ––– ––– ––– ––– 3.1 ––– ––– ––– ––– ––– ––– ––– V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA eemΩ VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A V mV/°C VDS = VGS, ID = 50μA μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 15V, ID = 19A VDS = 15V nC VGS = 4.5V ID = 19A See Fig.17 & 18 nC VDS = 16V, VGS = 0V Ω VDD = 15V, VGS = 4.5V ns ID = 19A RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Parameter dEAS Single Pulse Avalanche Energy ™IAR Avalanche Current Diode Characteristics Typ. ––– ––– Max. 97 19 Units mJ A Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ù(Body Diode) VSD Diode Forward Voltage ––– ––– 3.9 ––– ––– 190 ––– ––– 1.0 MOSFET symbol D A showing the integral reverse G p-n junction diode. S eV TJ = 25°C, IS = 19A, VGS = 0V trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– 20 30 ns TJ = 25°C, IF = 19A, VDD = 15V eÖ–– 28 42 nC di/dt = 325A/μs See Fig.16 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com © 2013 International Rectifier August 20, 2013 ID, Drain-to-Source Current (A) 2 1000 100 TOP BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 10 1 0.1 2.7V ≤ 60μs PULSE WIDTH Tj = 25°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) IRFH7934PbF 1000 100 TOP BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 10 2.7V 1 0.1 ≤ 60μs PULSE WIDTH Tj = 150°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (A) 1000 100 TJ = 150°C 10 TJ = 25°C 1 0.1 0.01 1.0 VDS = 15V ≤ 60μs PULSE WIDTH 2.0 3.0 4.0 VGS, Gate-to-Source Voltage (V) 5.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 24A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 3 www.irf.com © 2013 International Rectifier Fig 4. Normalized On-Resistance vs. Temperature August 20, 2013 IRFH7934PbF C, Capacitance (pF) 100000 10000 1000 100 1 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss Crss 10 VDS, Drain-to-Source Voltage (V) 100 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) 14 ID= 19A 12 10 VDS= 24V VDS= 15V 8 6 4 2 0 0.


IRFH3707PBF IRFH7934PBF IRFH7936PBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)