Document
Applications
l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC Converters in Networking Systems
IRFH7934PbF
VDSS 30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.5m @VGS = 10V 20nC
Benefits
l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and
Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l RoHS compliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Base part number IRFH7934PBF
Package Type PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number IRFH7934TRPBF
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation gPower Dissipation gLinear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range
Max. 30 ± 20 24 19 76 190 3.1 2.0
0.025 -55 to + 150
Units V
A
W W/°C
°C
Thermal Resistance
Parameter
fRθJC gRθJA
Junction-to-Case Junction-to-Ambient
Notes through
are on page 10 1 www.irf.com © 2013 International Rectifier
Typ. ––– –––
Max. 2.9 40
Units °C/W
August 20, 2013
IRFH7934PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ΔΒVDSS/ΔTJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
VGS(th) ΔVGS(th) IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Qgs1 Qgs2 Qgd Qgodr
Qsw Qoss RG
Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance
td(on) tr td(off) tf Ciss Coss Crss
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Avalanche Characteristics
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 110 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
––– 0.021
2.9 4.2 1.8 -6.5 ––– ––– ––– ––– ––– 20 4.8 2.5 6.3 6.4 8.8 15 1.7 12 16 14 7.5 3100 623 241
––– ––– 3.5 5.1 2.35 ––– 1.0 150 100 -100 ––– 30 ––– ––– ––– ––– ––– ––– 3.1 ––– ––– ––– ––– ––– ––– –––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A
V mV/°C
VDS
=
VGS,
ID
=
50μA
μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V VGS = -20V
S VDS = 15V, ID = 19A
VDS = 15V nC VGS = 4.5V
ID = 19A See Fig.17 & 18
nC VDS = 16V, VGS = 0V
Ω VDD = 15V, VGS = 4.5V
ns ID = 19A RG=1.8Ω See Fig.15
VGS = 0V pF VDS = 15V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy IAR Avalanche Current
Diode Characteristics
Typ. ––– –––
Max. 97 19
Units mJ A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
––– ––– 3.9
––– ––– 190 ––– ––– 1.0
MOSFET symbol
D
A showing the integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 19A, VGS = 0V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
––– 20 30 ns TJ = 25°C, IF = 19A, VDD = 15V
eÖ–– 28 42 nC di/dt = 325A/μs See Fig.16
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2013 International Rectifier
August 20, 2013
ID, Drain-to-Source Current (A)
2
1000 100
TOP BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V
10
1 0.1
2.7V
≤ 60μs PULSE WIDTH Tj = 25°C
1 10 VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
IRFH7934PbF
1000 100
TOP BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V
10 2.7V
1 0.1
≤ 60μs PULSE WIDTH Tj = 150°C
1 10 VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1000
100 TJ = 150°C
10
TJ = 25°C 1
0.1
0.01 1.0
VDS = 15V ≤ 60μs PULSE WIDTH
2.0 3.0 4.0 VGS, Gate-to-Source Voltage (V)
5.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 24A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics 3 www.irf.com © 2013 International Rectifier
Fig 4. Normalized On-Resistance vs. Temperature
August 20, 2013
IRFH7934PbF
C, Capacitance (pF)
100000
10000
1000
100 1
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss Coss Crss
10 VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
14 ID= 19A
12
10
VDS= 24V VDS= 15V
8
6
4
2
0 0.