Power MOSFET. IRFH7936PBF Datasheet

IRFH7936PBF MOSFET. Datasheet pdf. Equivalent

Part IRFH7936PBF
Description Power MOSFET
Feature IRFH7936PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifer M.
Manufacture International Rectifier
Total Page 9 Pages
Datasheet
Download IRFH7936PBF Datasheet



IRFH7936PBF
IRFH7936PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
4.8m@VGS = 10V 17nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
PQFN 5X6 mm
Max.
30
± 20
20
16
54
160
3.1
2.0
0.025
-55 to + 150
Typ.
–––
–––
Max.
5.6
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
1 www.irf.com © 2013 International Rectifier
August 16, 2013



IRFH7936PBF
IRFH7936PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.022
4.1
6.0
1.8
-6.3
–––
–––
–––
–––
–––
17
4.5
2.0
5.5
5.0
7.5
9.0
1.5
17
12
19
7.0
2360
450
210
–––
–––
4.8
6.8
2.35
–––
1.0
150
100
-100
–––
26
–––
–––
–––
–––
–––
–––
2.3
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 16A
V
mV/°C
VDS
=
VGS,
ID
=
50µA
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 16A
VDS = 15V
nC
VGS = 4.5V
ID = 16A
See Fig.17 & 18
nC VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
ID = 16A
RG=1.8
See Fig.15
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
28
16
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 3.9
––– ––– 160
––– ––– 1.0
MOSFET symbol
D
A
showing the
integral reverse
G
ep-n junction diode.
S
V TJ = 25°C, IS = 16A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– 14 21 ns TJ = 25°C, IF = 16A, VDD = 15V
––– 15 23 nC di/dt = 300A/µs See Fig.16
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2013 International Rectifier
August 16, 2013





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