Power MOSFET
IRFH7921PbF
Applications
l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Comp...
Description
IRFH7921PbF
Applications
l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems
l Optimized for Control FET Applications
VDSS 30V
HEXFET® Power MOSFET
RDS(on) max
Qg
8.5mΩ@VGS = 10V 9.3nC
Benefits
l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and
Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l RoHS compliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C
TJ
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
g Power Dissipation g Power Dissipation g Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
RθJC RθJA
f Junction-to-Case g Junction-to-Ambient
Max. 30 ± 20 15 12 34 120 3.1 2.0
0.025 -55 to + 150
Units V
A W W/°C °C
Typ. ––– –––
Max. 7.9 40
Units °C/W
Notes through
are on page 9
1
www.irf.com © 2013 International Rectifier
August 16, 2013
IRFH7921PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-...
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