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IRFH7921PBF

International Rectifier

Power MOSFET

IRFH7921PbF Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Comp...


International Rectifier

IRFH7921PBF

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IRFH7921PbF Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems l Optimized for Control FET Applications VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg 8.5mΩ@VGS = 10V 9.3nC Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l RoHS compliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for more reliable Soldering PQFN 5X6 mm Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current g Power Dissipation g Power Dissipation g Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter RθJC RθJA f Junction-to-Case g Junction-to-Ambient Max. 30 ± 20 15 12 34 120 3.1 2.0 0.025 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 7.9 40 Units °C/W Notes  through … are on page 9 1 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7921PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-...




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