Power MOSFET. IRFH7914PBF Datasheet

IRFH7914PBF MOSFET. Datasheet pdf. Equivalent

Part IRFH7914PBF
Description Power MOSFET
Feature IRFH7914PbF Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power.
Manufacture International Rectifier
Datasheet
Download IRFH7914PBF Datasheet



IRFH7914PBF
IRFH7914PbF
Applications
l Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
8.7m@VGS = 10V 8.3nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes  through … are on page 9
Max.
30
± 20
15
12
35
110
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
7.2
40
Units
°C/W
1 www.irf.com © 2013 International Rectifier
August 16, 2013



IRFH7914PBF
IRFH7914PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
e––– 7.5
e––– 11.2
8.7
13
m
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
1.35 1.8 2.35 V
––– -6.08 ––– mV/°C VDS = VGS, ID = 25µA
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
77 ––– –––
––– 8.3 12
S VDS = 15V, ID = 11A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.1 –––
VDS = 15V
–––
–––
1.0
2.8
–––
–––
nC
VGS = 4.5V
ID = 11A
––– 2.4 –––
See Fig.17 & 18
Qsw Switch Charge (Qgs2 + Qgd)
––– 3.8 –––
Qoss Output Charge
––– 4.8 ––– nC VDS = 16V, VGS = 0V
RG
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 1.3 2.2
––– 11 –––
VDD = 15V, VGS = 4.5V
–––
–––
11
12
–––
–––
ns
ID = 11A
RG=1.8
––– 4.6 –––
See Fig.15
Ciss Input Capacitance
––– 1160 –––
VGS = 0V
Coss Output Capacitance
––– 220 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 100 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
17
11
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 3.9
––– ––– 110
––– ––– 1.0
––– 14 21
––– 9.5 14
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 11A, VGS = 0V
ns TJ = 25°C, IF = 11A, VDD = 15V
nC di/dt = 200A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2013 International Rectifier
August 16, 2013





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