Power MOSFET. IRF8734PBF Datasheet

IRF8734PBF MOSFET. Datasheet pdf. Equivalent

Part IRF8734PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 96226 IRF8734PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET f.
Manufacture International Rectifier
Total Page 10 Pages
Datasheet
Download IRF8734PBF Datasheet



IRF8734PBF
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Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
PD - 96226
IRF8734PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:30V 3.5m @VGS = 10V 20nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Notes  through … are on page 10
Max.
30
± 20
21
17
168
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
2/12/09



IRF8734PBF
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IRF8734PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
85
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
2.9
4.2
1.80
-6.5
–––
–––
–––
–––
–––
20
5.2
2.3
6.9
5.4
9.2
15
1.7
13
16
15
8.0
3175
627
241
–––
–––
3.5
5.1
2.35
–––
1.0
150
100
-100
–––
30
–––
–––
–––
–––
–––
–––
3.1
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 21A
VGS = 4.5V, ID = 17A
V
mV/°C
VDS
=
VGS,
ID
=
50µA
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 17A
VDS = 15V
nC
VGS = 4.5V
ID = 17A
See Figs. 16a &16b
nC VDS = 16V, VGS = 0V
eVDD = 15V, VGS = 4.5V
ns
ID = 17A
RG = 1.8
See Figs. 15a &15b
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
216
17
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 3.1
––– ––– 168
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.0
eV TJ = 25°C, IS = 17A, VGS = 0V
––– 20 30 ns TJ = 25°C, IF = 17A, VDD = 15V
e––– 25 38 nC di/dt = 345A/µs
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