IRF8734PBF

www.DataSheet4U.com PD - 96226 IRF8734PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS RDS(on) max Qg (typ.) 30V 3.5m @VGS = 10V 20nC : S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Power Dissipation Pulsed Drain Current Max. 30 ± 20 21 17 168 2.5 1.6 0.02 -55 to + 150 Units V f Power Dissipation f c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient f g Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 10 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 2/12/09 www.DataSheet4U.com IRF8734PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static D...