Power MOSFET. IRF8736PBF Datasheet

IRF8736PBF MOSFET. Datasheet pdf. Equivalent

Part IRF8736PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 97120 IRF8736PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET f.
Manufacture International Rectifier
Datasheet
Download IRF8736PBF Datasheet



IRF8736PBF
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Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead -Free
PD - 97120
IRF8736PbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg Typ.
:4.8m @VGS = 10V 17nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
30
± 20
18
14.4
144
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 9
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1
08/1/07



IRF8736PBF
www.DataSheet4U.com
IRF8736PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.022 –––
––– 3.9 4.8
––– 5.5 6.8
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 18A
eVGS = 4.5V, ID = 14.4A
1.35 1.8 2.35 V VDS = VGS, ID = 50µA
––– -6.1 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
52 ––– –––
––– 17 26
S VDS = 15V, ID = 14.4A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 4.4 –––
VDS = 15V
––– 1.9 ––– nC VGS = 4.5V
––– 5.8 –––
ID = 14.4A
––– 4.9 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 7.7 –––
Qoss
Output Charge
––– 7.1 ––– nC VDS = 10V, VGS = 0V
RG
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 1.3 2.2
––– 12 –––
eVDD = 15V, VGS = 4.5V
––– 15 –––
ID = 14.4A
––– 13 ––– ns RG = 1.8
––– 7.5 –––
See Fig. 14
Ciss Input Capacitance
––– 2315 –––
VGS = 0V
Coss Output Capacitance
––– 449 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 219 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
126
14.4
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 144
A showing the
integral reverse
––– ––– 1.0
ep-n junction diode.
V TJ = 25°C, IS = 14.4A, VGS = 0V
e––– 16 24 ns TJ = 25°C, IF = 14.4A, VDD = 10V
––– 19 29 nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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