Power MOSFET
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PD - 97120
IRF8736PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processo...
Description
www.DataSheet4U.com
PD - 97120
IRF8736PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead -Free
VDSS
RDS(on) max Qg Typ. 30V 4.8m @VGS = 10V 17nC
:
S S S G
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
30 ± 20 18 14.4 144 2.5 1.6 0.02 -55 to + 150
Units
V
f f
c
A W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RθJL RθJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through
are on page 9
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1
08/1/07
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IRF8736PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leak...
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