Power MOSFET. IRF8714PBF Datasheet

IRF8714PBF MOSFET. Datasheet pdf. Equivalent

Part IRF8714PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 96116 IRF8714PbF Applications l Control MOSFET of Sync-Buck Converters us.
Manufacture International Rectifier
Datasheet
Download IRF8714PBF Datasheet



IRF8714PBF
www.DataSheet4U.com
PD - 96116
IRF8714PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:8.7m @VGS = 10V 8.1nC
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Description
The IRF8714PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8714PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
08/01/06



IRF8714PBF
www.DataSheet4U.com
IRF8714PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
30
–––
–––
–––
1.35
–––
–––
–––
0.021
7.1
10.9
1.80
-6.0
–––
–––
–––
8.7
13
2.35
–––
1.0
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 14A
eVGS = 4.5V, ID = 11A
V VDS = VGS, ID = 25µA
mV/°C VDS = VGS, ID = 25µA
µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
71 ––– –––
––– 8.1 12
S VDS = 15V, ID = 11A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 1.9 –––
VDS = 15V
––– 1.0 ––– nC VGS = 4.5V
––– 3.0 –––
ID = 11A
––– 2.2 –––
See Figs. 15 & 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.0 –––
Qoss Output Charge
Rg Gate Resistance
––– 4.8 ––– nC VDS = 16V, VGS = 0V
––– 1.6 2.6
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 10 –––
VDD = 15V, VGS = 4.5V
––– 9.9 –––
ID = 11A
––– 11 ––– ns RG = 1.8
––– 5.0 –––
See Fig. 18
Ciss Input Capacitance
––– 1020 –––
VGS = 0V
Coss Output Capacitance
––– 220 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 110 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
65
11
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 110
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 11A, VGS = 0V
e––– 14 21 ns TJ = 25°C, IF = 11A, VDD = 15V
––– 15 23 nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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