Power MOSFET. IRF8707PBF Datasheet

IRF8707PBF MOSFET. Datasheet pdf. Equivalent

Part IRF8707PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 96118A IRF8707PbF Applications Control MOSFET of Sync-Buck Converters use.
Manufacture International Rectifier
Total Page 9 Pages
Datasheet
Download IRF8707PBF Datasheet



IRF8707PBF
www.DataSheet4U.com
PD - 96118A
IRF8707PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:11.9m @VGS = 10V 6.2nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
± 20
11
9.1
88
2.5
1.6
Units
V
A
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
10/24/07



IRF8707PBF
www.DataSheet4U.com
IRF8707PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.022
9.3
14.2
1.80
-5.8
–––
–––
–––
–––
–––
6.2
1.4
0.7
2.2
1.9
2.9
3.7
2.2
6.7
7.9
7.3
4.4
760
170
82
Max. Units
Conditions
–––
–––
11.9
17.5
2.35
–––
1.0
150
100
-100
–––
9.3
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 11A
VGS = 4.5V, ID = 8.8A
V VDS = VGS, ID = 25µA
mV/°C VDS = VGS, ID = 25µA
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 8.8A
––– VDS = 15V
–––
–––
nC
VGS = 4.5V
ID = 8.8A
––– See Figs. 15 & 16
–––
––– nC VDS = 16V, VGS = 0V
3.7
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 8.8A
RG = 1.8
––– See Fig. 18
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
53
8.8
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 3.1
A MOSFET symbol
showing the
D
––– –––
88
––– ––– 1.0
integral reverse
G
A
p-n junction diode.
S
eV TJ = 25°C, IS = 8.8A, VGS = 0V
e––– 12 18 ns TJ = 25°C, IF = 8.8A, VDD = 15V
––– 13 20 nC di/dt = 300A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)