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PD - 97145
IRF8313PbF
Applications
l l
HEXFET® Power MOSFET
Load Switch DC/DC Conversion
VDSS
RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC
Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) Description
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
SO-8
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ±20 9.7 8.1 81 2.0 1.3 0.016 -55 to + 175
Units
V
c
A
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W W/°C °C
Thermal Resistance
RθJL RθJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
––– –––
Max.
42 62.5
Units
°C/W
Notes through
are on page 9
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
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11/5/08
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IRF8313PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.021 12.5 18.6 1.80 -6.0 ––– ––– ––– ––– ––– 6.0 1.5 0.9 2.2 1.4 2.9 3.8 2.2 8.3 9.9 8.5 4.2 760 172 87 ––– ––– 15.5 21.6 2.35 ––– 1.0 150 100 -100 ––– 9.0 ––– ––– ––– ––– ––– ––– 3.6 ––– ––– ––– ––– ––– ––– ––– pF ns nC Ω nC VDS = 15V VGS = 4.5V ID = 8.0A V
Conditions
VGS = 0V, ID = 250μA VGS = 10V, ID = 9.7A VGS = 4.5V, ID = 8.0A VDS = VGS, ID = 25μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS.