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IRF8313PBF Dataheets PDF



Part Number IRF8313PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF8313PBF DatasheetIRF8313PBF Datasheet (PDF)

www.DataSheet4U.com PD - 97145 IRF8313PbF Applications l l HEXFET® Power MOSFET Load Switch DC/DC Conversion VDSS RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) Description S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 SO-8 The IRF8313PbF incorporates the latest HEXFET Power MOSFET .

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www.DataSheet4U.com PD - 97145 IRF8313PbF Applications l l HEXFET® Power MOSFET Load Switch DC/DC Conversion VDSS RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) Description S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 SO-8 The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ±20 9.7 8.1 81 2.0 1.3 0.016 -55 to + 175 Units V c A Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range W W/°C °C Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. ––– ––– Max. 42 62.5 Units °C/W Notes  through … are on page 9 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 11/5/08 www.DataSheet4U.com IRF8313PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.021 12.5 18.6 1.80 -6.0 ––– ––– ––– ––– ––– 6.0 1.5 0.9 2.2 1.4 2.9 3.8 2.2 8.3 9.9 8.5 4.2 760 172 87 ––– ––– 15.5 21.6 2.35 ––– 1.0 150 100 -100 ––– 9.0 ––– ––– ––– ––– ––– ––– 3.6 ––– ––– ––– ––– ––– ––– ––– pF ns nC Ω nC VDS = 15V VGS = 4.5V ID = 8.0A V Conditions VGS = 0V, ID = 250μA VGS = 10V, ID = 9.7A VGS = 4.5V, ID = 8.0A VDS = VGS, ID = 25μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS.


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