STS10PF30L

www.DataSheet4U.com P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET™ II POWER MOSFET Table 1: General Features TYPE STS10PF30L ■ ■ STS10PF30L Figure 1:Package RDS(on) <0.014 Ω ID 10 A VDSS 30V ■ TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance. APPLICATIONS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ LOAD SWITCH SO-8 Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STS10PF30L MARKING S10PF30L PACKAGE SO-8 PACKAGING TAPE & REEL Table 3: ABSOLUTE MAXIMUM RATING Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 30 30 ± 16 10 6 40 2.5 Unit V V V A A A W Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2005 Rev. 2.0 1/9 www.DataSheet4U.com STS10PF30L Table 4: THERMAL DATA Rthj-amb Rthj-lead Tl Tstg (*) Thermal Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Lead Temperature For Soldering Purpose storage temperature Max Max Typ 47 16 150 -55 to 150 °C/W °C/W °C °C (*) When Mounted on 1 inch2 FR-4 bo...