STF5N52U

STF5N52U Datasheet N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a TO-220FP package Features Order code VDS RDS(on) max. ID PTOT ct(s) 2 3 1 du TO-220FP ro D(2) STF5N52U 525 V Outstanding dv/dt capability Gate charge minimized Very low intrinsic capacitances Very low RDS(on) Extremely low trr 1.50 Ω 4.4 A 25 W te P Applications le Switching applications o G(1) bs Description - O This device is N-channel Power MOSFET developed using UltraFASTmesh™ ) technology, which combines the advantages of reduced on resistance, Zener gate t(s S(3) AM15572v1_no_tab protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Obsolete Produc Product status link STF5N52U Product summary Order code STF5N52U Marking 5N52U Package TO-220FP Packing Tube DS12943 - Rev 1 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com STF5N52U Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value VGS Gate- source voltage ±30 ID Drain current (continuous) at TC = 25 °C 4.4 ID ) IDM (1) t(s PTOT uc dv/dt (2) Drain current (continuous) at TC= 100 °C Drain current (pulsed) Total power dissipation at TC = 25 °C Peak diode recovery voltage slope rod VISO P Tstg te Tj le ESD Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Storage temperature range Operating junction te...