N-channel MOSFET
STF13NM60N
Datasheet
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a TO-220FP package
3 2 1 TO-220FP D(2...
Description
STF13NM60N
Datasheet
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFET in a TO-220FP package
3 2 1 TO-220FP D(2)
G(1) S(3)
AM01475v1_noZen_noTab
Features
Order code
VDS
RDS(on) max.
ID
STF13NM60N
600 V
360 mΩ
11 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Product status link STF13NM60N
Product summary
Order code
STF13NM60N
Marking
13NM60N
Package
TO-220FP
Packing
Tube
DS14454 - Rev 1 - September 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STF13NM60N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID(1)
Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max)
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (3) Peak diode recovery voltage s...
Similar Datasheet