Power MOSFETs. CSD16321Q5 Datasheet

CSD16321Q5 MOSFETs. Datasheet pdf. Equivalent

Part CSD16321Q5
Description Power MOSFETs
Feature N-Channel www.DataSheet4U.com CSD16321Q5 Features  Optimized for 5V gate drive  Ultra Low Qg & Q.
Manufacture Ciclon
Total Page 9 Pages
Datasheet
Download CSD16321Q5 Datasheet



CSD16321Q5
N-Channel
CICLONwww.DataSheet4U.com NexFETPower MOSFETs
CSD16321Q5
Features
Optimized for 5V gate drive
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
Pb Free Terminal Plating
RoHS Compliant
QFN 5mm x 6mm Plastic Package
Top View
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =66A, L = 0.1mH, RG = 25Ω
1. RθJA = 390C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. See Figure 10
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
14
2.5
VGS = 3.0V
VGS = 4.5V
VGS = 8.0V
1.1
2.8
2.1
1.9
V
nC
nC
m
m
m
V
Value
25
+10 / -6
100
31
200
3.1
-55 to 150
218
Units
V
V
A
A
A
W
°C
mJ
RDS(ON) vs. VGS
Gate Charge
6 10
ID = 25A
9 VDS = 12.5V
5 8 ID = 25A
4
TC = 125ºC
TC = 25ºC
7
6
35
4
2
3
1
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage (V)
2
1
0
0 5 10 15 20 25 30 35
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16321Q5
Package
QFN 5X6 Plastic Package
Package Media
13 inch reel
© 2008 CICLON Semiconductor Device Corp., rev 2.0
All rights reserved. Confidential and proprietary information. Do not distribute.
Qty
2500
Ship
Tape and Reel
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CSD16321Q5
N-Channel
CICLON NexFETwww.DataSheet4U.com
Power
MOSFETs
CSD16321Q5
Electrical Characteristics (TA = 25OC unless otherwise stated)
Symbol
Parameter
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs Transconductance
Dynamic Characteristics
CISS Input Capacitance
COSS Output Capacitance
CRSS Reverse Transfer Capacitance
Rg Series Gate Resistance
Qg Gate Charge Total (4.5V)
Qgd Gate Charge Gate to Drain
Qgs Gate Charge Gate to Source
Qg(th) Gate Charge at Vth
QOSS Output Charge
td(on) Turn On Delay Time
tr Rise Time
td(off) Turn Off Delay Time
tf Fall Time
Diode Characteristics
VSD Diode Forward Voltage
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Test Conditions
VGS = 0V, ID = 250µA
VGS = 0V, VDS = 20V
VDS = 0V, VGS = 10V
VDS = VGS, ID = 250µA
VGS = 3.0V, ID = 25A
VGS = 4.5V, ID = 25A
VGS = 8.0V, ID = 25A
VDS = 12.5V, ID = 25A
VGS = 0V, VDS = 12.5V
f = 1MHz
VDS = 12.5V, ID = 25A
VDS = 15V, VGS = 0V
VDS = 12.5V
VGS = 4.5V ID = 25A
RG = 2.7
IS = 25A, VGS = 0V
Vdd=13V, IF = 25A,
di/dt = 300A/µs
Vdd=13V, IF = 25A,
di/dt = 300A/µs
© 2008 CICLON Semiconductor Device Corp., rev 2.0
All rights reserved. Confidential and proprietary information. Do not distribute.
Min Typ Max Units
25 ▬ ▬ V
▬ ▬ 1 µA
▬ ▬ 100 nA
0.9 1.1 1.4
V
2.8 3.5 m
2.1 2.6 m
1.9 2.4 m
150
S
2360 3100 pF
1700 2200 pF
115 150 pF
1.2
14 19 nC
2.5 nC
4.0 nC
2.1 nC
36 nC
11 ns
19 ns
40 ns
30 ns
0.8 1.0 V
33 nC
32 ns
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