WSE128K16-xxx

White Electronic Designs www.DataSheet4U.com WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Access Times of 35ns (SRAM) and 150ns (EEPROM) Access Times of 45ns (SRAM) and 120ns (EEPROM) Access Times of 70ns (SRAM) and 300ns (EEPROM) Packaging 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (H1) (Package 400) 68 lead, Hermetic CQFP (G2T), 22mm (0.880") square (Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (FIGURE 2) 128Kx16 SRAM 128Kx16 EEPROM Organized as 128Kx16 of SRAM and 128Kx16 of EEPROM Memory with separate Data Buses Both blocks of memory are User Configurable as 256Kx8 Low Power CMOS Commercial, Industrial and Military Temperature Ranges TTL Compatible Inputs and Outputs Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight - 13 grams typical EEPROM MEMORY FEATURES Write Endurance 10,000 Cycles Data Retention at 25°C, 10 Years Low Power CMOS Operation Automatic Page Write Operation Page Write Cycle Time 10ms Max. Data Polling for End of Write Detection Hardware and Software Data Protection TTL Compatible Inputs and Outputs * This product is under development, is not qualified or characterized and is subject to change without notice. FIGURE 1 – WSE128K16-XH1X PIN CONFIGURATION Top View 1 SD8 SD9 SD10 A13 A14 A15 A16 NC SD0 SD1 SD2 11 22 12 SWE2# SCS2# GND SD11 A10 A11 A12 VCC SCS1# NC SD3 33 23 SD15 SD14 SD13 SD12 OE# NC SWE#1 SD7 SD6 SD5 SD4 ED8 ED9 ED10 A6 A7 NC A8 A9 ED0 ED1 ED2 44 34 VCC ...