Device Applications. 2SJ635 Datasheet

2SJ635 Applications. Datasheet pdf. Equivalent

Part 2SJ635
Description P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Feature Ordering number : ENN8277 www.DataSheet4U.com 2SJ635 P-Channel Silicon MOSFET 2SJ635 Features • •.
Manufacture Sanyo Semicon Device
Total Page 4 Pages
Datasheet
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2SJ635
Ordering number : ENN8277
www.DataSheet4U.com
2SJ635
2SJ635
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
DC / DC Converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
ID=--6A, VGS=--10V
ID=--6A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
Ratings
--60
±20
--12
--48
1
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
--60
--1.2
9
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
13 S
45 60 m
65 92 m
2200
pF
235 pF
165 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PA MS IM TB-00001450 No.8277-1/4



2SJ635
www.DaCtaoSnthineueetd4Ufr.ocmompreceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7518-004
2SJ635
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
IS=--12A, VGS=0V
Package Dimensions
unit : mm
7003-004
6.5 2.3
5.0 0.5
4
6.5
5.0
4
Ratings
min typ max
Unit
18 ns
80 ns
200 ns
125 ns
45 nC
10 nC
7 nC
--0.9 --1.2 V
2.3
0.5
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Switching Time Test Circuit
VIN
0V
--10V
PW=10µs
D.C.1%
VIN
G
VDD= --30V
ID= --6A
RL=5
D VOUT
P.G 50
2SJ635
S
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
No.8277-2/4





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