ZDT6790. T6790 Datasheet

T6790 ZDT6790. Datasheet pdf. Equivalent

Part T6790
Description ZDT6790
Feature www.DataSheet4U.com SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 .
Manufacture Zetex Semiconductors
Total Page 3 Pages
Datasheet
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T6790
SM-8 COMPLEMENTARY MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6790
C1
C1
C2
C2
PARTMARKING DETAIL – T6790
B1
NPN
E1
B2
E2 PNP
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Tj:Tstg
NPN
PNP
45 -50
45 -40
5 -5
6 -6
2 -2
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
Ptot
2.25 W
2.75 W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18 mW/ °C
22 mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6 °C/ W
45.5 °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
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T6790
ZDT6790
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 45
Voltage
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 45
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5
V IE=100µA
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
0.1 µA VCB=35V
0.1 µA VEB=4V
0.1 V
0.5 V
IC=0.1A, IB=0.5mA*
IC=1A, IB=5mA*
0.9 V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9 V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
fT
500
400
150
150
MHz
IC=100mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200 pF
Output Capacitance
Cobo
16 pF
Switching Times
ton
toff
33
1300
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
For typical characteristics graphs see FZT690 datasheet.
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=500mA, IB!=50mA
IB2=50mA, VCC=10V
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