2SK3687-01MR

www.DataSheet4U.com 2SK3687-01MR FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol Ratings V DS 600 VDSX 600 ID ±16 ID(puls] ±64 VGS ±30 IAS 16 EAS dV DS/dt dV/dt PD Tch Tstg VISO 242.7 20 5 2.16 97 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/µs W Remarks VGS=-30V Tch< =150°C L=1.74mH VCC =60V *1 VDS< =600V *2 Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) °C °C kVrms t=60sec, f=60Hz Gate(G) Source(S) *1 See to Avalanche Energy Graph *2 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton T...