POWER MOSFET. 2SK3687-01MR Datasheet

2SK3687-01MR MOSFET. Datasheet pdf. Equivalent

Part 2SK3687-01MR
Description N-CHANNEL SILICON POWER MOSFET
Feature www.DataSheet4U.com 2SK3687-01MR FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Outline .
Manufacture Fuji Electric
Total Page 4 Pages
Datasheet
Download 2SK3687-01MR Datasheet



2SK3687-01MR
2SK3687-01MR
www.DataSheet4U.com
FUJI POWER MOSFET
Super FAP-G Series
200311
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Symbol
VDS
VDSX
ID
ID(puls]
VGS
IAS
Ratings
600
600
±16
±64
±30
16
EAS 242.7
dVDS/dt
dV/dt
PD
Tch
Tstg
VISO
20
5
2.16
97
+150
-55 to +150
2
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Tch<=150°C
mJ L=1.74mH
kV/s
kV/µs
W
VCC=60V *1
VDS<=600V
*2
Ta=25°C
Tc=25°C
°C
°C
kVrms t=60sec, f=60Hz
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 See to Avalanche Energy Graph
*2 IF<= -ID, -di/dt=50A/µs, VCC<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
Tch=25°C
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=8A VGS=10V
Tch=125°C
ID=8A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8A
VGS=10V
RGS=10
VCC=300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600
3.0
6.5
16
10
0.42
13
1590
200
8
29
16
58
8
34
12
10
1.00
0.68
7.8
5.0
25
250
100
0.57
2390
300
12
43.5
24
87
12
51
18
15
1.50
V
V
µA
nA
S
pF
ns
nC
A
V
µs
µC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.289 °C/W
58.0 °C/W
1



2SK3687-01MR
2SK3687-01MR
www.DataSheet4U.com
Characteristics
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
FUJI POWER MOSFET
Typical Output Characteristics
50 ID=f(VDS):80 µs pulse test,Tch=25 °C
40
30 20V
10V
8V
7V
20
6.5V
10
VGS=6.0V
0
0 4 8 12 16 20 24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
1.0
VGS=6V
6.5V
0.9
0.8
7V
0.7 8V
10V
0.6 20V
0.5
0.4
0.3
0.2
0.1
0.0
0
10 20
ID [A]
30
1
0.1
0.1
1 10
ID [A]
100
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7 max.
0.6
0.5
0.4 typ.
0.3
0.2
0.1
0.0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
2





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