POWER MOSFET. 2SK3685-01 Datasheet

2SK3685-01 MOSFET. Datasheet pdf. Equivalent

Part 2SK3685-01
Description POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Feature www.DataSheet4U.com 2SK3685-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Dr.
Manufacture ETC
Total Page 4 Pages
Datasheet
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2SK3685-01
2SK3685-01
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FUJI POWER MOSFET
Super FAP-G Series
200309
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Symbol
VDS
VDSX
ID
ID(puls]
VGS
IAS
Ratings
500
500
±19
±76
±30
19
Non-Repetitive
Maximum avalanche energy
EAS
245.3
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
dVDS/dt
dV/dt
20
5
Max. power dissipation
PD
2.50
235
Operating and storage
temperature range
Tch +150
Tstg -55 to +150
*2 See to Avalanche Energy Graph
*3 IF<= -ID, -di/dt=50A/µs, VCC<= BVDSS, Tch<= 150°C
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Tch<=150°C
mJ
kV/s
kV/µs
W
°C
°C
L=1.25mH
VCC=50V *2
VDS<=500V
*3
Ta=25°C
Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=9.5A VGS=10V
ID=9.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=9.5A
VGS=10V
RGS=10
Tch=25°C
Tch=125°C
VCC=250V
ID=19A
VGS=10V
L=1.25mH Tch=25°C
IF=19A VGS=0V Tch=25°C
IF=19A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
500
3.0
7.5
19
10
0.29
15
1560
230
8
29
13
56
8
34
13
10
1.20
0.57
7.0
5.0
25
250
100
0.38
2340
345
12
43.5
19.5
84
12
51
19.5
15
1.50
V
V
µA
nA
S
pF
ns
nC
A
V
µs
µC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.532 °C/W
50.0 °C/W
1



2SK3685-01
2SK3685-01
www.DataSheet4U.com
Characteristics
Allowable Power Dissipation
PD=f(Tc)
400
300
200
100
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
100
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
50
40
20V
10V
8V
30
7V
20
6.5V
10
VGS=6.0V
0
0 4 8 12 16 20 24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
1.0
VGS=6V
6.5V
0.9
7V
0.8
0.7
0.6
0.5 8V 10V
20V
0.4
0.3
0.2
0.1
0.0
0
10 20 30 40
ID [A]
1
0.1
0.1
1
ID [A]
10
100
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=9.5A,VGS=10V
1.0
0.9
0.8
0.7
0.6
0.5
max.
0.4
typ.
0.3
0.2
0.1
0.0
-50
-25
0
25 50 75
Tch [°C]
100 125 150
2





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