planar type. MA4ZD03 Datasheet

MA4ZD03 type. Datasheet pdf. Equivalent

Part MA4ZD03
Description Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
Feature Schottky Barrier Diodes (SBD) www.DataSheet4U.com MA4ZD03 Silicon epitaxial planar type Unit: mm 1.
Manufacture Panasonic Semiconductor
Total Page 3 Pages
Datasheet
Download MA4ZD03 Datasheet



MA4ZD03
Schottky Barrier Diodes (SBD)
MA4ZD03www.DataSheet4U.com
Silicon epitaxial planar type
For high speed switching
For small type power supply
For DC/DC converter
I Features
Two isolated elements are contained in one package, allowing
high-density mounting
IF = 100 mA rectification is possible
Optimum for high frequency rectification because of its short
reverse recovery time (trr)
S-Mini type 4-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Forward current (DC) Single
Double
IF
100 mA
75
Peak forward
Single
IFM
300
mA
current
Double
225
Non-repetitive peak Single
forward-surge-current * Double
IFSM
1
0.75
A
Reverse voltage (DC)
Repetitive peak reverse-voltage
Junction temperature
Storage temperature
VR
VRRM
Tj
Tstg
45
45
125
55 to +125
V
V
°C
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2.1±0.1
1.3±0.1
4
3
12
0.3±0.05
5°
Unit: mm
0.7±0.1
0.16+–00..016
1 : Anode 1
2 : Anode 2
EIAJ : SC-82
3 : Cathode 2
4 : Cathode 1
SMini4-F1 Package
Marking Symbol M5A
Internal Connection
43
12
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR VR = 40 V
VF IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
5
0.54 0.60
12 18
1.2
µA
V
pF
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: August 2001
SKH00110AED
1



MA4ZD03
MA4ZD03
www.DataSheet4U.com
IF VF
103
102 Ta = 125°C
75°C
10 25°C
1
101
102
103
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR VR
103
Ta = 125°C
102
75°C
10
25°C
1
101
102
0
10 20 30 40 50 60
Reverse voltage VR (V)
Ct VR
25
Ta = 25°C
20
15
10
5
0
0 10 20 30 40 50 60
Reverse voltage VR (V)
2 SKH00110AED





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