SF1A200H

www.DataSheet4U.com Semiconductor SF1A200H Ultra Fast Recovery Diode Applications High speed switching and rectification Switching mode power supply Features Ultra-fast reverse recovery time: trr=30ns Max. Small & compact type SMD package Low forward voltage & low reverse current Low switching loss Ordering Information Type No. SF1A200H Marking 1A2H Package Code SOD-106 Outline Dimensions unit : mm 4.60~5.00 3.90~4.10 1.49 Max. 2.50~2.70 ● PIN Connections 0.27 Max. Cathode Mark 1.25~1.35 2 1 1. Anode 2. Cathode KSD-D6A004-000 1 www.DataSheet4U.com SF1A200H [Ta=25°C] Absolute Maximum Ratings Characteristic Repetitive peak reverse voltage Average rectified output current Peak forward surge current (Non-repetitive 60Hz sine wave) Junction temperature Storage temperature range Symbol VRRM IO IFSM TJ Tstg Rating 200 1.0 20 150 -45 ~ 150 Unit V A A °C °C Electrical Characteristics Characteristic Peak forward voltage Repetitive peak reverse current Reverse recovery time Thermal resistance [Ta=25°C] Symbol VFM 1) IRRM trr Rth Test Condition IF=1A VR=200V IF=0.5A, di/dt=-100A/㎲ Junction to ambient 2) Min. - Typ. - Max. 0.98 10 30 76 Unit V ㎂ ns °C/W 1) Pulse test : tP≤380 ㎲, Duty cycle≤2% 2) Device mounted on glass epoxy PCB (recommanderable minimum solder land) ※ Recommend PCB solder land [Unit : mm] KSD-D6A004-000 2 www.DataSheet4U.com SF1A200H Fig. 2 IR - VR Electrical Characteristic Curves Fig.1 IF - VF Fig. 3 PF - IO [㎂] Fig. 4...