Switching Diode. SDS142WM Datasheet

SDS142WM Diode. Datasheet pdf. Equivalent

Part SDS142WM
Description Switching Diode
Feature www.DataSheet4U.com Semiconductor SDS142WM Switching Diode Features • • • • • SMD package : SOT-3.
Manufacture AUK
Datasheet
Download SDS142WM Datasheet



SDS142WM
SDS142WM
SWITCHING DIODE
Small Signal Fast Switching Diode
General Description
Dual general-purpose switching diodes, fabricated in planar
technology, and packaged in small SOT-323 surface mounted
device (SMD) packages.
Features and Benefits
Silicon epitaxial planar diode
High switching speed: trr4ns
Low forward drop voltage and low leakage current
“Green” device and RoHS compliant device
Available in full lead (Pb)-free device
SOT-323
Applications
Ultra high speed switching application
Ordering Information
Part Number
Marking Code
Package
Packaging
SDS142WM
5C
SOT-323
Tape & Reel
Marking Information
5C
5 C = Specific Device Code
= Year & Week Code Marking
Pinning Information
Pin Description
1 Anode (Diode 1)
2 Cathode (Diode 2)
3 Cathode (Diode 1),
Anode (Diode 2)
Simplified Outline
Rev. date: 25-AUG-10
KSD-D5D014-001
Graphic Symbol
www.auk.co.kr
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SDS142WM
Absolute Maximum Ratings (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Maximum repetitive peak reverse voltage
Continuous reverse voltage
Maximum average forward rectified current
Forward current (DC)
Maximum repetitive peak forward current
Non-repetitive peak forward surge current(t=10ms)
Power dissipation 1)
1) Device mounted on FR-4 board with recommended pad layout.
VRM
VR
IO
IF
IFM
IFSM
PD
SDS142WM
Ratings
85
80
100
100
300
2
150
Unit
V
V
mA
mA
mA
A
mW
Thermal Characteristics (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Thermal resistance, junction to ambient 1)
Operating junction temperature
Storage temperature range
Rth(j-a)
Tj
Tstg
1) Device mounted on FR-4 board with recommended pad layout.
Ratings
830
150
-55 ~ 150
Unit
C/W
C
C
Electrical Characteristics (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Test Condition
Forward voltage 2)
Reverse leakage current 3)
Total capacitance
Reverse recovery time
VF(1)
VF(2)
VF(3)
IR
CT
trr
IF=1mA
IF=10mA
IF=100mA
VR=80V
VR=0V, f=1
IF=10mA (Fig. 5)
2) Pulse test: tP≤380, Duty cycle≤2%
3) Pulse test: tP≤5㎳, Duty cycle≤2%
Min. Typ. Max.
- 0.6
-
- 0.7
-
- 0.9 1.2
- - 0.5
- 2.2 4.0
- 1.6 4.0
Unit
V
V
V
uA
pF
ns
Rev. date: 25-AUG-10
KSD-D5D014-001
www.auk.co.kr
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