(PDF) B1094 Datasheet PDF | NEC





B1094 Datasheet PDF

Part Number B1094
Description 2SB1094
Manufacture NEC
Total Page 4 Pages
PDF Download Download B1094 Datasheet PDF

Features: Datasheet pdf DATA SHEET www.DataSheet4U.com SILICON POWER TRANSISTOR 2SB1094 PNP SILICON E PITAXIAL TRANSISTOR FOR LOW-FREQUENCY P OWER AMPLIFIER FEATURES • The 2SB109 4 features ratings covering a wide rang e of applications and is ideal for powe r supplies or a variety of drives in au dio and other equipment.: VCEO ≥ −6 0 V, VEBO ≥ −7.0 V, IC(DC) ≤ −3 .0 A • Mold package that does not req uire an insulating board or insulation bushing • Complementary transistor wi th 2SD1585 PACKAGE DRAWING (UNIT: mm) QUALITY GRADES • Standard Please ref er to “Quality Grades on NEC Semicond uctor Devices” (Document No. C11531E) published by NEC Corporation to know t he specification of quality grade on th e devices and its recommended applicati ons. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Parameter Collector to base voltag e Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temper.

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B1094 datasheet
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DATA SHEET
SILICON POWER TRANSISTOR
2SB1094
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIER
FEATURES
• The 2SB1094 features ratings covering a wide range of
applications and is ideal for power supplies or a variety of drives
in audio and other equipment.:
VCEO ≥ −60 V, VEBO ≥ −7.0 V, IC(DC) ≤ −3.0 A
• Mold package that does not require an insulating board or
insulation bushing
• Complementary transistor with 2SD1585
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
60
60
7.0
3.0
5.0
0.6
15
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16186EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928

B1094 datasheet
www.DaEtaLSEheCeTt4RU.IcCoAmL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 60 V, IE = 0
Emitter cutoff current
IEBO VEB = 7.0 V, IC = 0
DC current gain
hFE1** VCE = 5.0 V, IC = 50 mA
DC current gain
hFE2** VCE = 5.0 V, IC = 0.5 A
Collector saturation voltage VCE(sat)** IC = 2.0 A, IB = 0.2 A
Base saturation voltage
VBE(sat)** IC = 2.0 A, IB = 0.2 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 5.0 V, IC = 0.1 A
** Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25°C)
2-mm thick
aluminum
silicon grease
co ting
2SB1094
MIN.
20
40
TYP.
100
0.5
1.1
70
20
MAX.
10
10
200
1.5
2.0
Unit
µA
µA
V
V
pF
MHz
With infinite heatsink (Tc = 25°C)
Without heatsink
Ambient Temperature Ta (°C)
Case Temperature TC (°C)
Tc = 25°C
(with infinite heatsink )
Collector to Emitter Voltage VCE (V)
Pulse Width PW (s)
2 Data Sheet D16186EJ2V0DS





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