MD2103DFP Datasheet (data sheet) PDF





MD2103DFP Datasheet, High voltage NPN power transistor

MD2103DFP   MD2103DFP  

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www.DataSheet4U.com MD2103DFP High volt age NPN power transistor for standard d efinition CRT display Features ■ ■ ■ ■ ■ ■ State-of-the-art techn ology: – Diffused collector “enhanc ed generation” Stable performance ver sus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully i nsulated power package UL compliant Int egrated free wheeling diode TO-220FP 1 2 3 Applications ■ Horizontal defle ction output for TV Figure 1. Interna l schematic diagram Description The MD 2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The

MD2103DFP Datasheet, High voltage NPN power transistor

MD2103DFP   MD2103DFP  
new MD product series show improved sil icon efficiency briging updated perform ance to the horizontal deflection stage . RBE=65Ω (typ) Table 1. Device su mmary Marking MD2103DFP Package TO-220F P Packing Tube Order code MD2103DFP M ay 2008 Rev 1 1/9 www.st.com 9 www.D ataSheet4U.com Electrical ratings MD2 103DFP 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB Ptot VI NS Tstg TJ Absolute maximum rating Par ameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB =0) Em itter-base voltage (IC =0) Collector cu rrent Collector peak current (tP < 5ms) Base current Total dissipation at Tc 25°C Insulation withstand voltage (R MS) from all three leads to external he atsink Storage temperature Max. operati ng junction temperature Value 1500 700 7 6 9 3 38 1500 -65 to 150 150 Unit V V V A A A W V °C °C Table 3. Symbol Thermal data Parameter Value 3.3 Unit C/W Rthj-case Thermal resistance junc tion-case max 2/9 www.DataSheet4U.com MD2103DFP Electrical characteristics 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Tab le 4. Symbol ICES IEBO V(BR)EBO VCE(sat ) (1) Electrical characteristics Param eter Collector cut-off current (VBE =0) Emitter cut-off current (IC =0) Emitte r-base brakdown voltage (IC = 0) Collector-emitter saturatio








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