C2258 Datasheet (data sheet) PDF





C2258 Datasheet, 2SC2258

C2258   C2258  

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Power Transistors www.DataSheet4U.com 2 SC2258 Silicon NPN triple diffusion pla nar type For high breakdown voltage gen eral amplification ■ Features • Hig h collector-emitter voltage (Base open) VCEO • High transition frequency fT • TO-126B package which requires no i nsulation plate for installation to the heat sink φ 3.16±0.1 8.0+0.5 –0.1 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 1.9±0.1 ■ Absolute Maximum Rating s Ta = 25°C Parameter Collector-base v oltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base volta ge (Collector open) Collector current P eak collector current Collector power d issipation Symbol VCBO VCEO VEBO IC ICP PC T

C2258 Datasheet, 2SC2258

C2258  
j Tstg Rating 250 250 7 100 150 1.2 *1 4 Junction temperature Storage temperatu re *2 Unit V V V mA mA W °C °C 1 2 0 .75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3 ±0.2 3 1.76±0.1 150 −55 to +150 N ote) *1: Without heat sink *2 :With a 1 00 × 100 × 2 mm Al heat sink ■ Ele ctrical Characteristics Ta = 25°C ± 3 °C Parameter Emitter-base voltage (Col lector open) Base-emitter voltage Colle ctor-emitter cutoff current (Resistor b etween B and E) Forward current transfe r ratio Symbol VEBO VBE ICER hFE1 hFE2 Collector-emitter saturation voltage Tr ansition frequency Collector output cap acitance (Common base, input open circu ited) VCE(sat) fT Cob Conditions IE = 0 .1 mA, IC = 0 VCE = 20 V, IC = 40 mA VC E = 250 V, RBE = 100 kΩ VCE = 20 V, I C = 40 mA VCE = 50 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = −10 m A, f = 200 MHz VCB = 50 V, IE = 0, f = 1 MHz 100 3.0 4.5 40 30 1.2 V MHz pF Mi n 7 1.2 100 Typ Max Unit V V µA  N ote) Measuring methods are based on JAP ANESE INDUSTRIAL STANDARD JIS C 7030 me asuring methods for transistors. 16.0 1.0 1: Emitter 2: Collector 3: Base T O-126B-A1 Package 3.05±0.1 Publicati on date: January 2003 SJD00098BED 1 2SC2258 www.DataSheet4U.com 5 PC  T a 120 (1)With a 100×100×2mm Al heat s ink (2)Without heat sink IC  VCE 120 TC=25˚C 1.8mA IB=2.0mA IC  VBE VCE=10V








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