Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
8....
Power
Transistors
2SC2258
Silicon
NPN triple diffusion planar type
For high breakdown voltage general amplification
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
φ 3.16±0.1
3.8±0.3 11.0±0.5
High collector-emitter voltage (Base open) VCEO
3.05±0.1
High transition frequency fT
TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
250
V
pe) Collector-emitter voltage (Base open) VCEO
250
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
7
V
sta tinu Collector current
IC
100
mA
a e cle con Peak collector current n u duct lifetcyyped, dis Collector power dissipation
ICP
150
mA
PC
1.2 *1
W
4 *2
te tin Pro ed Junction temperature
four ntinu Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
ing isco Note) *1: Without heat sink
in n follow ed d *2 :With a 100 × 100 × 2 mm Al heat sink
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
a o includestype, plan ■ Electrical Characteristics Ta = 25°C ± 3°C
c tinued ance Parameter
Symbol
Conditions
Min Typ Max Unit
M is con inten Emitter-base voltage (Collector open)
/Dis ma Base-emitter voltage ce pe, Collector-emitter cutoff current
D nan e ty (Resistor between B and E)
VEBO VBE ICER
IE = 0.1 mA, IC = 0 VCE = 20 V, IC = 40 mA VCE = 250 V, RBE = 100 kΩ
7
V
1.2
...
