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Power Transistors. 2SC5149 Datasheet |
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SavantIC Semiconductor
www.DataSheet4U.com
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC5149
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
8
16
4
50
150
-55~150
UNIT
V
V
V
A
A
A
W
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SavantIC Semiconductor
www.DataSheet4U.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IC=400mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.3A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1.3A
ICBO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=5A ; VCE=5V
Cob Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
VF Forward voltage(damper diode)
fT Transition frequency
Switching times (inductive load)
IF=5A
IE=0.1A ; VCE=10V
ts Storage time
tf Fall time
ICP=5A;IB1(end) =1.1A
fH=31.5kHz
Product Specification
2SC5149
MIN TYP. MAX UNIT
5V
5V
1 1.3 V
1 mA
66 200 mA
8 25
3.8 8
110 pF
1.35 1.8
V
2 MHz
46
0.2 0.5
µs
µs
2
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