SST2622

www.DataSheet4U.com SST2622 520mA, 50V,RDS(ON) 1.8£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SOT-26 is universally used for all commercial-industrial applications. 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25 1.40 1.80 0 o 10 o 1.20Ref. Features * RoHS Compliant * Low Gate Charge * Surface Mount Package D1 D2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 ±20 520 410 1.5 0.8 0.006 -55~+150 Unit V V mA mA A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 150 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 www.DataSheet4U.com SST2622 520mA, 50V,RDS(ON) 1.8 £[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source ...