P-Channel MOSFET
Elektronische Bauelemente
SST2603
-5A, -20V,RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Produc...
Description
Elektronische Bauelemente
SST2603
-5A, -20V,RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SST2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SST2603 is universally used for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
Features
* Small package outline * Simple drive requirement
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
D
G S
Symbol VDS VGS
ID@TA=25 oC ID@TA=70 oC
IDM PD@TA=25 oC
Tj, Tstg
SOT-26
1.90REF 0.95REF 0.95REF
0.45 REF 2.60 3.00
1.2 REF 0.60 REF
1.40 1.80
0.30 0.55
2.70 0.10 Max 3.10
o
0
0.7 1.45
10 o
Dimensions in millimeters
Date Code
D DS 6 54
2603
12 DD
3 G
Ratings -20 ±12 -5 -4 -20 2 0.016
-55~+150
Unit V
V A A A W W / oC oC
Thermal Data
Parameter Thermal Resistance Junction-ambient 3
Max.
Symbol Rthj-a
Ratings 62.5
Unit
oC /W
http://www.SeCoSGmbH.com/
15-Jun-2010 Rev. C
Any changing of specification will not be informed individual
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Elektronische Bauelemente
SST2603
-5A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Sym...
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