P-Channel MOSFET
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SST2623
-2A, -30V,RDS(ON) 170m£[
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.F...
Description
www.DataSheet4U.com
SST2623
-2A, -30V,RDS(ON) 170m£[
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-26
Description
0.37Ref. 0.20 0.60 Ref. 2.60 3.00
The SST2623 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2623 is universally used for all commercial-industrial applications.
0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25
1.40 1.80
0 o 10
o
1.20Ref.
Features
* Low On-Resistance * Low Gate Charge
D1 D2
Dimensions in millimeters
D1 6
S1 5
D2 4
G1
G2
Date Code
2623
S1
S2
1 G1
2 S2
3 G2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
-30
±20 -2 -1.6 -20 1.2 0.01 -55~+150
Unit
V V A A A W
W/ C
o o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
Symbol
Rthj-a
Ratings
110
o
Unit
C /W
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
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SST2623
-2A, -30V,RDS(ON) 170m£[
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Vol...
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