IRHLG77110

www.DataSheet4U.com PD-97178 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω ID 1.8A 1.8A 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL TECHNOLOGY ™ MO-036AB International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footn...