SI1405BDH

New Product Si1405BDH www.DataSheet4U.com Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) 0.112 at VGS = - 4.5 V 0.160 at VGS = - 2.5 V 0.210 at VGS = - 1.8 V ID (A)c - 1.6 - 1.6 - 1.6 3.67 nC Qg (Typ) FEATURES TrenchFET® Power MOSFET APPLICATIONS Load Switch for Portable Devices RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code BO D 2 5 D Part # Code XX YY Lot Traceability and Date Code G 3 Top View 4 S Ordering Information: Si1405BDH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c, d Symbol VDS VGS Limit -8 ±8 -1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c Unit V ID A IDM IS - 8c - 1.6c - 1.47a, b 2.27 1.45 1.47a, b 0.95a, b - 55 to 150 260 W PD TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d t≤5s Steady State Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 74634 S-71945-Rev. A, 10-Sep-07 www.vishay.co...