SI1407DL

Si1407DL www.DataSheet4U.com New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.130 @ VGS = –4.5 V –12 12 0.170 @ VGS = –2.5 V 0.225 @ VGS = –1.8 V ID (A) –1.8 –1.5 –1.3 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OC XX YY Lot Traceability and Date Code Part # Code D 2 5 D G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID –1.4 IDM IS PD TJ, Tstg –0.8 0.625 0.400 –55 to 150 –5 –0.8 0.568 W 0.295 _C –1.2 A Symbol VDS VGS 5 secs Steady State –12 "8 Unit V –1.8 –1.6 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71074 S-01561—Rev. C, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 165 180 105 Maximum 200 220 130 Unit _C/W 2-1 Si1407DL www.DataSheet4U.com Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –9.6 V, VGS ...