SI1410EDH

Si1410EDH www.DataSheet4U.com New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.070 @ VGS = 4.5 V 20 0.080 @ VGS = 2.5 V 0.100 @ VGS = 1.8 V ID (A) 3.7 3.4 3.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D D 1 6 D Marking Code D 2 5 D YY AA G 3 4 S XX G Lot Traceability and Date Code Part # Code Top View S 1 kW ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID 2.6 IDM IS 1.4 1.56 0.81 –55 to 150 8 0.9 1.0 0.52 W _C 2.0 A Symbol VDS VGS 5 secs 20 Steady State Unit V "12 3.7 2.9 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71409 S-03185—Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W 1 Si1410EDH www.DataSheet4U.com Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V...